High-power modular multilevel converters with SiC JFETs
This paper studies the possibility of building a modular multilevel converter (M2C) using
silicon carbide (SiC) switches. The main focus is on a theoretical investigation of the …
silicon carbide (SiC) switches. The main focus is on a theoretical investigation of the …
Efficiency evaluation of the modular multilevel converter based on Si and SiC switching devices for medium/high-voltage applications
The modular multilevel converter (MMC) is the most promising converter topology for
medium-and high-power applications. One of the main concerns in the operation of the …
medium-and high-power applications. One of the main concerns in the operation of the …
Low-loss high-performance base-drive unit for SiC BJTs
Driving a silicon carbide bipolar junction transistor is not a trivial issue, if low drive power
consumption and short-switching times are desired. A dual-source base-drive unit with a …
consumption and short-switching times are desired. A dual-source base-drive unit with a …
Evaluation of SiC BJTs for high-power DC–DC converters
G Calderon-Lopez, AJ Forsyth… - … on Power Electronics, 2013 - ieeexplore.ieee.org
The design of a 200-A, all-SiC power-module-based on bipolar junction transistor devices is
described, and the impact of the module is assessed on the performance of a 50-kW dc–dc …
described, and the impact of the module is assessed on the performance of a 50-kW dc–dc …
Analysis and experimental verification of the influence of fabrication process tolerances and circuit parasitics on transient current sharing of parallel-connected SiC …
Operation of parallel-connected 4H-SiC vertical junction field effect transistors (VJFETs) from
SemiSouth is modeled using numerical simulations and experimentally verified. The …
SemiSouth is modeled using numerical simulations and experimentally verified. The …
Design steps towards a 40-kVA SiC inverter with an efficiency exceeding 99.5%
This paper describes the concept, the design, the construction, and experimental
investigation of a 40 kVA inverter with Silicon Carbide Junction Field Effect Transistors. The …
investigation of a 40 kVA inverter with Silicon Carbide Junction Field Effect Transistors. The …
Experimental comparison of dc-dc boost converters with SiC JFETs and SiC bipolar transistors
An experimental performance comparison between SiC JFET and SiC BJT switches which
are used as the main switch for a 2 kW dc/dc converter is presented. In order to perform a fair …
are used as the main switch for a 2 kW dc/dc converter is presented. In order to perform a fair …
A 6kW, 200kHz boost converter with parallel-connected SiC bipolar transistors
This paper describes issues related to design, construction and experimental verification of
a 6 kW, 200 kHz boost converter (300 V/600 V) built with four parallel-connected SiC bipolar …
a 6 kW, 200 kHz boost converter (300 V/600 V) built with four parallel-connected SiC bipolar …
Investigation of a finned baseplate material and thickness variation for thermal performance of a SiC power module
Y Zhang, I Belov, M Bakowski, JK Lim… - … and Mulit-Physics …, 2014 - ieeexplore.ieee.org
A simplified transient computational fluid dynamics model of an automotive three-phase
double-side liquid cooled silicon carbide power inverter, including pin-fin baseplates, has …
double-side liquid cooled silicon carbide power inverter, including pin-fin baseplates, has …
An accurate way of determining BJT's switching loss in medium and high voltage applications
S Borekci, NC Acar - 2012 IEEE International Conference on …, 2012 - ieeexplore.ieee.org
Semiconductors are widely used in power electronics applications as a switching device. In
some applications, BJTs are used and their power loss calculation has a crucial effect on the …
some applications, BJTs are used and their power loss calculation has a crucial effect on the …