Diamond hosts a wide variety of colour centres that have demonstrated outstanding optical and spin properties. Among them, the nitrogen-vacancy (NV) centre is by far the most …
JV Macpherson - Physical Chemistry Chemical Physics, 2015 - pubs.rsc.org
Conducting, boron doped diamond (BDD), in addition to its superior material properties, offers several notable attributes to the electrochemist making it an intriguing material for …
S Shikata - Diamond and Related Materials, 2016 - Elsevier
According to international energy proposal, about 25% of the total CO2 reduction should come from “end use efficiency”. Hence, low loss power devices are an important technology …
A Tallaire, J Achard, F Silva, O Brinza… - Comptes Rendus …, 2013 - Elsevier
Diamond is a material with outstanding properties making it particularly suited for high added-value applications such as optical windows, power electronics, radiation detection …
K Zhou, P Ke, X Li, Y Zou, A Wang - Applied Surface Science, 2015 - Elsevier
Nitrogen-doped diamond-like carbon (N-DLC) films were synthesized by glow discharge plasma enhanced chemical vapor deposition (PECVD) using a hybrid ion beam system. The …
Y Miyake, T Kondo, A Otake, Y Einaga… - ACS Sustainable …, 2023 - ACS Publications
We investigated the electrochemical CO2 reduction reaction (CO2RR) properties of boron- and nitrogen-codoped diamond (BNDD) electrodes. The BNDD electrodes exhibited higher …
G Colonna, CD Pintassilgo, F Pegoraro… - The European Physical …, 2021 - Springer
This paper presents recent activities covering different plasma fields, from both theoretical and experimental point of views. An overview of the present interests of the scientific …
Z Han, C Bayram - IEEE Electron Device Letters, 2023 - ieeexplore.ieee.org
Diamond p-type lateral Schottky barrier diodes (SBDs) with a 2--thick drift layer are fabricated with and without Al2O3 field plates. Schottky contacts composed of Mo (50 nm)/Pt …
The development of diamond power electronic devices based on p–n junctions strongly relies on the ability to achieve efficient n-type doping which has so far been the limiting …