The small silicon chip of Schottky diode (0.8× 0.8× 0.4 mm 3) with planar arrangement of
electrodes (chip PSD) as temperature sensor, which functions under the operating …

This study examines the electrical and optical properties of p-Si/n-SiC heterojunctions
subjected to UV and visible light in addition to the conduction mechanism of the device. The …

This paper reviews recent achievements on high-voltage SiC-based devices aimed at Wind
Power and Solid-State Transformer applications. SiC diodes with voltage ranges between …

The article reports a comprehensive study optimizing the OFF-and ON-state characteristics
of 3.3 kV junction barrier Schottky (JBS) diodes made using nickel, titanium, and …

We assess Raman spectroscopy as a tool for fast and non‐invasive mapping of charge
carrier density and carrier mobility in inhomogeneously doped 4H‐SiC. For this purpose, we …

This paper reports the detailed design, fabrication and characterization of 3300 V 4H-SiC
junction barrier Schottky (JBS) diodes. It features an n-type epilayer with thickness of 33 μm …

This paper discusses an elaborated study about the design of Junction-Barrier Schottky
(JBS) diodes regarding the width (w) and spacing (s) of the implanted p+ pattern, utilizing …

In order to avoid a premature breakdown and high leakage-currents of Silicon Carbide (SiC)
unipolar Schottky power diodes the Schottky-contact area needs to be shielded from the …

There is a great interest in monolithic 4H-SiC Junction Barrier Schottky (JBS) diodes with the
capability of a high forward current for industrial power applications. In this paper, we report …

Abstract In this paper, 1.2 kV, 3.3 kV, and 5.0 kV class 4H–SiC power Schottky barrier diodes
(SBDs) are fabricated with three N-type drift layer thickness values of 10 μm, 30 μm, and 50 …