Design and exploration of semiconductors from first principles: A review of recent advances

F Oba, Y Kumagai - Applied Physics Express, 2018 - iopscience.iop.org
Recent first-principles approaches to semiconductors are reviewed, with an emphasis on
theoretical insight into emerging materials and in silico exploration of as-yet-unreported …

Ceramic science of crystal defect cores

K Matsunaga, M Yoshiya, N Shibata, H Ohta… - Journal of the Ceramic …, 2022 - jstage.jst.go.jp
Ceramic materials are polycrystalline solids that are made up of metal and non-metal
elements, and inorganic crystal grains with specific crystal structures are fundamental …

Direct nanoscale sensing of the internal electric field in operating semiconductor devices using single electron spins

T Iwasaki, W Naruki, K Tahara, T Makino, H Kato… - ACS …, 2017 - ACS Publications
The electric field inside semiconductor devices is a key physical parameter that determines
the properties of the devices. However, techniques based on scanning probe microscopy …

Direct observation of dopant atom diffusion in a bulk semiconductor crystal enhanced by a large size mismatch

R Ishikawa, R Mishra, AR Lupini, SD Findlay… - Physical Review Letters, 2014 - APS
Diffusion is one of the fundamental processes that govern the structure, processing, and
properties of materials and it plays a crucial role in determining device lifetimes. However …

Three-dimensional location of a single dopant with atomic precision by aberration-corrected scanning transmission electron microscopy

R Ishikawa, AR Lupini, SD Findlay, T Taniguchi… - Nano …, 2014 - ACS Publications
Materials properties, such as optical and electronic response, can be greatly enhanced by
isolated single dopants. Determining the full three-dimensional single-dopant defect …

Designing defect-based qubit candidates in wide-gap binary semiconductors for solid-state quantum technologies

H Seo, H Ma, M Govoni, G Galli - Physical Review Materials, 2017 - APS
The development of novel quantum bits is key to extending the scope of solid-state quantum-
information science and technology. Using first-principles calculations, we propose that …

Competition between polar and nonpolar lattice distortions in oxide quantum wells: new critical thickness at polar interfaces

J Gazquez, M Stengel, R Mishra, M Scigaj, M Varela… - Physical review …, 2017 - APS
Two basic lattice distortions permeate the structural phase diagram of oxide perovskites:
antiferrodistortive (AFD) rotations and tilts of the oxygen octahedral network and polar …

[PDF][PDF] Morphological features in aluminum nitride epilayers prepared by magnetron sputtering

S Stach, D Dallaeva, Ş Ţălu, P Kaspar… - Materials Science …, 2015 - sciendo.com
The aim of this study is to characterize the surface topography of aluminum nitride (AlN)
epilayers prepared by magnetron sputtering using the surface statistical parameters …

Aluminium nitride cubic modifications synthesis methods and its features. Review

VS Kudyakova, RA Shishkin, AA Elagin… - Journal of the European …, 2017 - Elsevier
This article presents a brief review of the research progress achieved in the field of
aluminium nitride (AlN) metastable cubic modifications synthesis. It covers mainly the …

Large-angle illumination STEM: toward three-dimensional atom-by-atom imaging

R Ishikawa, AR Lupini, Y Hinuma, SJ Pennycook - Ultramicroscopy, 2015 - Elsevier
To fully understand and control materials and their properties, it is of critical importance to
determine their atomic structures in all three dimensions. Recent revolutionary advances in …