Trap density refers to the density of electronic trap states within dielectric materials that can
capture and release charge carriers (electrons or holes) in a semiconductor channel …

This paper demonstrates the static and dynamic characteristics of all-p organic inverter
employing a bottom gate bottom contact organic thin film transistor with a ditch incorporated …

Conventional techniques for extracting physics‐based model parameters are inherently
slow processes and often yield less accurate model parameters because of the inflexibility of …

In this paper, we propose a full-air-spacers (FAS, air spacers and air inner spacers)
technique and a feasible fabrication approach on gate all around (GAA) nanosheet field …

We introduce a compact core model for double-gate (DGFET) and surrounding-gate
(SGFET) MOSFETs designed for circuit simulations. Despite its high precision, the model is …

Abstract Graphene Nanosheet Field Effect Transistor (GNSFET) is constructed for the first
time (using grapheme material) and simulated by Silvaco TCAD Tools it can be considered …

In the most recent years, semiconductor-based devices and technologies have experienced
fast improvements, resulting in important advancements. To enhance their performances …