Coupling conduction-band valleys in SiGe heterostructures via shear strain and Ge concentration oscillations
Engineering conduction-band valley couplings is a key challenge for Si-based spin qubits.
Recent work has shown that the most reliable method for enhancing valley couplings entails …
Recent work has shown that the most reliable method for enhancing valley couplings entails …
Coupling conduction-band valleys in modulated SiGe heterostructures via shear strain
Engineering conduction-band valley couplings is a key challenge for Si-based spin qubits.
Recent work has shown that the most reliable method for enhancing valley couplings entails …
Recent work has shown that the most reliable method for enhancing valley couplings entails …
Strain engineering in Ge/GeSi spin qubits heterostructures
The heavy-holes in Ge/GeSi heterostructures show highly anisotropic gyromagnetic
response with in-plane $ g $-factors $ g_ {x, y}^*\lesssim 0.3$ and out-of-plane $ g $-factor …
response with in-plane $ g $-factors $ g_ {x, y}^*\lesssim 0.3$ and out-of-plane $ g $-factor …
[HTML][HTML] Valley splitting by extended zone effective mass approximation incorporating strain in silicon
J Noborisaka, T Hayashi, A Fujiwara… - Journal of Applied …, 2024 - pubs.aip.org
We propose a main mechanism of large valley splitting experimentally observed at the
interface of buried oxide (BOX)/silicon-on-insulator (SOI) structures. Silicon metal-oxide …
interface of buried oxide (BOX)/silicon-on-insulator (SOI) structures. Silicon metal-oxide …