Lagging heat models in thermodynamics and bioheat transfer: a critical review

Z Shomali, R Kovács, P Ván, IV Kudinov… - Continuum Mechanics …, 2022 - Springer
The accuracy of the classical heat conduction model, known as Fourier's law, is highly
questioned, dealing with the micro-and nanosystems and biological tissues. In other words …

Macro-to nanoscale heat and mass transfer: the lagging behavior

J Ghazanfarian, Z Shomali, A Abbassi - International Journal of …, 2015 - Springer
The classical model of the Fourier's law is known as the most common constitutive relation
for thermal transport in various engineering materials. Although the Fourier's law has been …

[HTML][HTML] Implementation of nonlocal non-Fourier heat transfer for semiconductor nanostructures

R Baratifarimani, Z Shomali - Case Studies in Thermal Engineering, 2024 - Elsevier
The study of heat transport in micro/nanoscale structures due to their application, especially
in Nanoelectronics, is a matter of interest. In other words, the precise simulation of the …

Study of robin condition influence on phonon nano-heat conduction using meso-scale method in MOSFET and SOI-MOSFET devices

O Zobiri, A Atia, M Arıcı - Materials Today Communications, 2021 - Elsevier
Metal oxide semiconductor field effect transistor (MOSFET) is a major element of electronic
device circuits due to its ability to control the electrical signal. On the other hand, the size of …

Blood flow effects in thermal treatment of three-dimensional non-Fourier multilayered skin structure

M Jamshidi, J Ghazanfarian - Heat Transfer Engineering, 2021 - Taylor & Francis
The non-Fourier dual-phase-lag heat model has been solved as a well-known accurate
bioheat model to compute the temperature distribution in a three-dimensional multilayered …

Development of non-Fourier thermal attitude for three-dimensional and graphene-based MOS devices

Z Shomali, A Abbassi, J Ghazanfarian - Applied Thermal Engineering, 2016 - Elsevier
In this paper, the intact subject of 3-D MOSFETs is studied. Three well-known 3-D MOSFET
nano-devices, including a common three dimensional silicon MOSFET, the FinFET, and the …

Monte-Carlo parallel simulation of phonon transport for 3D silicon nano-devices

Z Shomali, B Pedar, J Ghazanfarian… - International journal of …, 2017 - Elsevier
Due to the importance of the transistors in nano-electronics technology, the accurate study of
these nano-devices is an essential field of research. Taking into account the non-Fourier …

A time-fractional dual-phase-lag framework to investigate transistors with TMTC channels (TiS3, In4Se3) and size-dependent properties

MH Fotovvat, Z Shomali - Micro and Nanostructures, 2022 - Elsevier
In this study, a time fractional dual-phase-lag model with temperature jump boundary
condition as a choice for the Fourier's law replacement in thermal modeling of transistors, is …

Non-Fourier effects on the temperature time-dependence of a silicon igniter

J Chen, X Zhang - IEEE Electron Device Letters, 2019 - ieeexplore.ieee.org
With the trend of more transient and efficient semiconductor ignition system, the non-Fourier
effect becomes a significant factor for the heat conduction analysis. Based on the Cattaneo …

Drift–diffusion-Poisson-dual phase lag thermal model with phonon scattering in gate all around field effect transistor

M Belkhiria, HA Alyousef, H Chehimi, F Aouaini… - Thin Solid Films, 2022 - Elsevier
Abstract Gate All Around Field Effect Transistor (GAAFET) is a promising alternative for
improving channel control, reducing leakage currents, and bringing down the operational …