The gripper finger design is a recurring problem in many robotic grasping platforms used in
industry. The task of switching the gripper configuration to accommodate for a new batch of …

Abstract Changes of the defect structure of silicon p-type crystal surface layer under the
influence of plastic deformation and high temperature annealing in oxygen atmosphere …

Abstract Changes in conductivity of irradiated and non-irradiated p-Si mono-crystals under
the influence of elastic uniaxial mechanical stress were investigated in this paper. An …

Given study investigates defects to which correspond deep energy levels in the band gap of
silicon through capacitive-modulation spectroscopy. It describes the defects evolution under …

The electrical and photoelectric properties of polycrystalline Si are studied after the high-
intensity short-pulse implantation of C ions. It is established that annealing in vacuum (10–2 …

We report the results of studies for the radiation-stimulated changes in electro-physical
characteristics of surface-barrier Al–Si–Bi structures based on p-Si. We demonstrate that the …

Monocrystals of p-Si were used to study the changes in the electrical conductivity of silicon
in the course of the action of a single-acting elastic load and X-radiation. An equation …

Методом ємнiсно-модуляцiйної спектроскопiї глибоких рiвнiв, IЧ-спектроскопiї коливних
рiвнiв молекул та атомiв дослiджено змiни дефектної структури приповерхневого шару …

The features of the radiation-stimulated changes in the I–V and C–V characteristics of the
emitter–base junction in KT3117 transistors are considered. It is shown that an increase in …

Представлено дослiдження дефектiв, яким вiдповiдають глибокi енерґетичнi рiвнi в
забороненiй зонi кремнiю за допомогою ємнiсно-модуляцiйної спектроскопiї та описано …