Sub-10 nm two-dimensional transistors: Theory and experiment
Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …
further scaling their gate length down to the sub-10 nm region is becoming extremely …
Emerging two‐dimensional bismuth oxychalcogenides for electronics and optoelectronics
Atomically thin two‐dimensional (2D) bismuth oxychalcogenides (Bi2O2X, X= S, Se, Te)
have recently attracted extensive attention in the material research community due to their …
have recently attracted extensive attention in the material research community due to their …
Self‐Driven WSe2/Bi2O2Se Van der Waals Heterostructure Photodetectors with High Light On/Off Ratio and Fast Response
P Luo, F Wang, J Qu, K Liu, X Hu… - Advanced Functional …, 2021 - Wiley Online Library
Benefiting from the superior electron mobility and good air‐stability, the emerging layered
bismuth oxyselenide (Bi2O2Se) nanosheet has received considerable attention with the …
bismuth oxyselenide (Bi2O2Se) nanosheet has received considerable attention with the …
Bi2O2Te Nanosheets Saturable Absorber‐Based Passive Mode‐Locked Fiber Laser: From Soliton Molecules to Harmonic Soliton
Z Hui, X Bu, Y Wang, D Han, J Gong… - Advanced Optical …, 2022 - Wiley Online Library
As a recent addition to the emerging 2D bismuth oxychalcogenides (Bi2O2X, where X= S,
Se, and Te), atomically‐thin bismuth oxytellurium (Bi2O2Te) exhibits unique thermoelectric …
Se, and Te), atomically‐thin bismuth oxytellurium (Bi2O2Te) exhibits unique thermoelectric …
Progress Report on Property, Preparation, and Application of Bi2O2Se
The study of 2D materials has been a significant and fascinating area, at least since the
discovery of graphene. As one of the layered bismuth oxychalcogenides, bismuth …
discovery of graphene. As one of the layered bismuth oxychalcogenides, bismuth …
Performance limit of monolayer MoSi 2 N 4 transistors
Recently, a novel two-dimensional (2D) MoSi2N4 has been successfully synthesized and
features high carrier mobility, moderate bandgap, and outstanding ambient stability (Science …
features high carrier mobility, moderate bandgap, and outstanding ambient stability (Science …
Promising Properties of a Sub-5-nm Monolayer Transistor
Two-dimensional (2D) semiconductors have attracted tremendous interest as natural
passivation and atomically thin channels could facilitate continued transistor scaling …
passivation and atomically thin channels could facilitate continued transistor scaling …
Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional
In the post-Moore era, improving energy efficiency is an urgent requirement for
microelectronics moving towards the Internet of Things, artificial intelligence, and 5G. In …
microelectronics moving towards the Internet of Things, artificial intelligence, and 5G. In …
Anisotropic in‐plane ballistic transport in monolayer black arsenic‐phosphorus fets
The performance limits of monolayer arsenic‐phosphorus (AsP) field‐effect transistors
(FETs) are explored by first‐principles simulations of ballistic transport in nanoscale devices …
(FETs) are explored by first‐principles simulations of ballistic transport in nanoscale devices …
Two-Dimensional MoSi2N4: An Excellent 2-D Semiconductor for Field-Effect Transistors
We report the performance of field-effect transistors (FETs), composed of monolayer of
recently synthesized layered two-dimensional (2-D) MoSi 2 N 4 as channel material, using …
recently synthesized layered two-dimensional (2-D) MoSi 2 N 4 as channel material, using …