Stimulating Oxide Heterostructures: A Review on Controlling SrTiO3‐Based Heterointerfaces with External Stimuli

DV Christensen, F Trier, W Niu, Y Gan… - Advanced Materials …, 2019 - Wiley Online Library
Numerous of the greatest inventions in modern society, such as solar cells, display panels,
and transistors, rely on a simple concept: An external stimulus is applied to a material and …

Oxygen vacancies: The (in) visible friend of oxide electronics

F Gunkel, DV Christensen, YZ Chen, N Pryds - Applied physics letters, 2020 - pubs.aip.org
Oxygen vacancies play crucial roles in determining the physical properties of metal oxides,
representing important building blocks in many scientific and technological fields due to their …

Electron mobility in oxide heterostructures

F Trier, DV Christensen, N Pryds - Journal of Physics D: Applied …, 2018 - iopscience.iop.org
Next-generation integrated circuit devices based on transition-metal-oxides are expected to
boast a variety of extraordinary properties, such as superconductivity, transparency in the …

Effect of oxygen vacancy on the crystallinity and optical band gap in tin oxide thin film

R Dangi, B Basnet, M Pandey, S Bhusal, B Budhathoki… - Energies, 2023 - mdpi.com
Herein, we have prepared tin oxide (SnO2) nanoparticles (NPs), through a co-precipitation
method, using SnCl2· 2H2O dissolved in distilled water (DW) as a precursor. Then, the …

Strain-tunable magnetism at oxide domain walls

DV Christensen, Y Frenkel, YZ Chen, YW Xie… - Nature Physics, 2019 - nature.com
Applying stress to a ferroelastic material results in a nonlinear strain response as domains of
different orientations mechanically switch. The ability to write, erase and move domain walls …

Large Linear Magnetoresistance of High‐Mobility 2D Electron System at Nonisostructural γ‐Al2O3/SrTiO3 Heterointerfaces

W Niu, Y Gan, Z Wu, X Zhang, Y Wang… - Advanced Materials …, 2021 - Wiley Online Library
Materials with a large linear magnetoresistance (MR) are great candidates for magnetic
sensors, but rarity boosts investigations for exploring this MR in material physics. 2D …

Band-Order Anomaly at the γ-Al2O3/SrTiO3 Interface Drives the Electron-Mobility Boost

A Chikina, DV Christensen, V Borisov, MA Husanu… - ACS …, 2021 - ACS Publications
The rich functionalities of transition-metal oxides and their interfaces bear an enormous
technological potential. Its realization in practical devices requires, however, a significant …

Orbital Ordering of the Mobile and Localized Electrons at Oxygen-Deficient LaAlO3/SrTiO3 Interfaces

A Chikina, F Lechermann, MA Husanu, M Caputo… - ACS …, 2018 - ACS Publications
Interfacing different transition-metal oxides opens a route to functionalizing their rich
interplay of electron, spin, orbital, and lattice degrees of freedom for electronic and spintronic …

Fully Optical Modulation of the Two-Dimensional Electron Gas at the γ-Al2O3/SrTiO3 Interface

W Niu, YW Fang, R Liu, Z Wu, Y Chen… - The Journal of …, 2022 - ACS Publications
Two-dimensional electron gas (2DEG) formed at the heterointerface between two oxide
insulators hosts plenty of emergent phenomena and provides new opportunities for …

Electron Mobility in

DV Christensen, Y Frenkel, P Schütz, F Trier… - Physical Review …, 2018 - APS
One of the key issues in engineering oxide interfaces for electronic devices is achieving high
electron mobility. SrTiO 3-based interfaces with high electron mobility have gained a lot of …