Defect-stabilized substoichiometric polymorphs of hafnium oxide with semiconducting properties
Hafnium oxide plays an important role as a dielectric material in various thin-film electronic
devices such as transistors and resistive or ferroelectric memory. The crystallographic and …
devices such as transistors and resistive or ferroelectric memory. The crystallographic and …
HfO2/WO3 Heterojunction Structured Memristor for High‐Density Storage and Neuromorphic Computing
With the boom of artificial intelligence (AI) and big data, electronics demand faster
computing speed and lower power consumption, however, von Neumann architecture of …
computing speed and lower power consumption, however, von Neumann architecture of …
Modulating the resistive switching stability of HfO 2-based RRAM through Gd doping engineering: DFT+ U
D Zhang, J Wang, Q Wu, Y Du - Physical Chemistry Chemical Physics, 2023 - pubs.rsc.org
Oxide-based resistive random access memory (RRAM) is standing out in both non-volatile
memory and the emerging field of neuromorphic computing, with the consequence of …
memory and the emerging field of neuromorphic computing, with the consequence of …
Enhanced Switching Reliability of Sol–Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field
Sol–gel-processed Y2O3 films were used as active channel layers for resistive random
access memory (RRAM) devices. The fabricated ITO/Y2O3/Ag RRAM devices exhibited the …
access memory (RRAM) devices. The fabricated ITO/Y2O3/Ag RRAM devices exhibited the …
Revealing the quantum nature of the voltage-induced conductance changes in oxygen engineered yttrium oxide-based RRAM devices
In this work, the quasi-analog to discrete transition occurring in the current–voltage
characteristic of oxygen engineered yttrium oxide-based resistive random-access memory …
characteristic of oxygen engineered yttrium oxide-based resistive random-access memory …
3-D Physical Electro-Thermal Modeling of Nanoscale Y2O3 Memristors for Synaptic Application
Here, we report the physical electro-thermal modeling of nanoscale Y 2 O 3-based
memristor devices. The simulation is carried out by the combined software package of …
memristor devices. The simulation is carried out by the combined software package of …
Improved Environment Stability of Y2O3 RRAM Devices with Au Passivated Ag Top Electrodes
In this study, we fabricated sol-gel-processed Y2O3-based resistive random-access memory
(RRAM) devices. The fabricated Y2O3 RRAM devices exhibited conventional bipolar RRAM …
(RRAM) devices. The fabricated Y2O3 RRAM devices exhibited conventional bipolar RRAM …
Experimental Demonstration of CeO2-Based Tunable Gated Memristor for RRAM Applications
This paper reports the fabrication and characterization of a cerium dioxide (CeO2)-based
gated memristor with metal electrodes. The fabricated device exhibits memristive behavior …
gated memristor with metal electrodes. The fabricated device exhibits memristive behavior …
Improved synaptic characteristics of oxide-based electrochemical random access memory at elevated temperatures using integrated micro-heater
In this brief, we propose an oxygen-based electrochemical RAM (O-ECRAM) with a micro-
heater to enhance the synaptic characteristics. Our findings demonstrate that by accelerating …
heater to enhance the synaptic characteristics. Our findings demonstrate that by accelerating …
Thickness dependence of resistive switching characteristics of the sol–gel processed Y2O3 RRAM devices
In this study, yttrium oxide (Y 2 O 3)-based resistive random-access memory (RRAM)
devices were fabricated using the sol–gel method. The fabricated Y 2 O 3 RRAM devices …
devices were fabricated using the sol–gel method. The fabricated Y 2 O 3 RRAM devices …