The aspiration of electronic technologies that are resistant to high‐energy cosmic radiation
is essential for current harsh radiation environment exploration. Integrated circuits mostly …

In this study, we investigated the effects of film thickness (t ch) on the radiation damage of
indium-gallium-tin oxide (IGTO) thin films and radiation tolerance of high-mobility IGTO thin …

Tin monoxide (SnO), as a p-type semiconductor material, has received widespread attention
in oxide thin-film transistors (TFTs) due to its excellent electrical properties. Passivation …

The study investigates the mitigation of radiation damage on p‐type SnO thin‐film transistors
(TFTs) with a fast, room‐temperature annealing process. Atomic layer deposition is utilized …

In this paper, the effects of sputter-deposited silicon oxide (SiO x) passivation on p-type tin
monoxide (SnO) semiconductor are investigated. X-ray photoelectron spectroscopy …

Thin films of cupric oxide (CuO) with various solution concentrations are deposited on the
glass substrates via solution processing, as suggested for p-type semiconductors with non …

In this study, the plasma oxidation effect in tin-oxide (SnO x) thin film was investigated. And
on this basis, we fabricated n-type thin-film transistors (TFTs) using the SnO x thin film with …

There is high demand for radiation-tolerant devices for use in electronic applications in
extreme irradiation environments, but conventional silicon transistors cannot satisfy the …

In this study, we investigated the effect of microwave-irradiation annealing (MWA) and
thermal furnace annealing (FA) in oxygen ambient on the active channel layer of p-type tin …

Despite its relatively high hole mobility, the electrical performance of p-type SnO thin-film
transistors (TFTs) lags behind that of n-type oxide TFTs. In this study, we present an …