Sensor applications based on AlGaN/GaN heterostructures
KT Upadhyay, MK Chattopadhyay - Materials Science and Engineering: B, 2021 - Elsevier
Abstract Gallium Nitride (GaN) belongs to III-N family of compound semiconductors, which
albeit new, is well-established material system in the fields of high power, high temperature …
albeit new, is well-established material system in the fields of high power, high temperature …
Recent progress on group III nitride nanostructure-based gas sensors
Group III nitrides are attracting considerable attention as promising materials for a variety of
applications due to their wide bandgap, high electron mobility, high thermal stability, and …
applications due to their wide bandgap, high electron mobility, high thermal stability, and …
Guided wave devices with selectively thinned piezoelectric layers
K Bhattacharjee - US Patent 10,530,329, 2020 - Google Patents
(57) ABSTRACT A micro-electrical-mechanical system (MEMS) guided wave device
includes a plurality of electrodes arranged below a piezoelectric layer (eg, either embedded …
includes a plurality of electrodes arranged below a piezoelectric layer (eg, either embedded …
Guided wave devices with embedded electrodes and non-embedded electrodes
K Bhattacharjee - US Patent 10,211,806, 2019 - Google Patents
(57) ABSTRACT A micro-electrical-mechanical system (MEMS) guided wave device
includes a plurality of electrodes arranged below a piezoelectric layer (eg, either embedded …
includes a plurality of electrodes arranged below a piezoelectric layer (eg, either embedded …
Prospective sensing applications of novel heteromaterial based dopingless nanowire-TFET at low operating voltage
Most of the sensors are based on different device architectures depending on the
application type. A novel dopingless (DL) vertical Nanowire (VNW)-TFET is proposed that is …
application type. A novel dopingless (DL) vertical Nanowire (VNW)-TFET is proposed that is …
Optical and acoustic sensing using Fano-like resonances in dual phononic and photonic crystal plate
We perform a theoretical study based on the transmissions of optical and acoustic waves
normally impinging to a periodic perforated silicon plate when the embedded medium is a …
normally impinging to a periodic perforated silicon plate when the embedded medium is a …
High-resolution AlGaN/GaN HEMT-based electrochemical sensor for biomedical applications
We have investigated the characteristics of pH and salinity sensor derived from the gated
AlGaN/GaN highelectron mobility transistor (HEMT) structures in phosphate buffer saline …
AlGaN/GaN highelectron mobility transistor (HEMT) structures in phosphate buffer saline …
Phononic and photonic crystals for sensing applications
Photonic and phononic crystals provide a novel and alternative platform for sensing material
properties with high sensitivity. The sensor aims to determine properties of the fluid such as …
properties with high sensitivity. The sensor aims to determine properties of the fluid such as …
Extended exposure of gallium nitride heterostructure devices to a simulated Venus environment
Further development of harsh environment electronics capable of uncooled operation under
Venus surface atmospheric conditions (~ 460° C,~ 92 bar, corrosive) would enable future …
Venus surface atmospheric conditions (~ 460° C,~ 92 bar, corrosive) would enable future …
Analytical modeling and simulation of AlGaN/GaN MOS-HEMT for high sensitive pH sensor
This paper presents an analytical model of AlGaN/GaN MOS-HEMT based pH sensor for the
first time to determine pH of different electrolyte solutions. Gouy-chapman stern model has …
first time to determine pH of different electrolyte solutions. Gouy-chapman stern model has …