Fabrication of silicon-on-diamond substrate with an ultrathin SiO2 bonding layer
M Nagata, R Shirahama, S Duangchan… - Japanese Journal of …, 2018 - iopscience.iop.org
We proposed and demonstrated a sputter etching method to prepare both a flat surface (root-
mean-square surface roughness of approximately 0.2–0.3 nm) and an ultrathin SiO 2 …
mean-square surface roughness of approximately 0.2–0.3 nm) and an ultrathin SiO 2 …
Development of the h-BN manufacturing process for 3D-LSI
M Yokoi, S Shinkai, S Matsumoto - 2021 IEEE CPMT …, 2021 - ieeexplore.ieee.org
Hexagonal-BN (h-BN) based SOI structure with through silicon via (TSV) shows higher heat
dissipation performance without degrading electrical characteristics compared with the …
dissipation performance without degrading electrical characteristics compared with the …
[PDF][PDF] Impact of the semiconductor on hexagonal-BN structure for power-supply on chip applications
Y Sato, K Ono, M Nomura, S Matsumoto… - … Conference on Solid …, 2018 - kyutech.repo.nii.ac.jp
This paper evaluates the semiconductor on hexagonal-BN (h-BN) structure for power-supply
on chip applications based on numerical simulations. Hexagonal-BN is used as an insulator …
on chip applications based on numerical simulations. Hexagonal-BN is used as an insulator …