Indium phosphide (InP) heterojunction bipolar transistors (HBTs) with of 350/675 GHz are
studied and explored for a linear, high efficiency and broadband power amplifiers (PAs) at …

In this article, a new bandpass distributed amplifier (DA) using a wideband gain-boosting
technique is presented. In particular, a feedback network, including a series inductor and a …

A wideband monolithic microwave/millimeter-wave integrated circuit (MMIC) distributed
amplifier (DA) using a 3-D interdigital capacitor at the input of the gain cell is demonstrated …

In this article, a wideband linearization technique for distributed amplifiers (DAs) is
presented. In particular, an auxiliary transistor is employed to create additional …

In this letter, we present the designs and development of a wideband, high output power
quadruple-stacked heterojunction bipolar transistor (HBT) distributed amplifier (DA). In …

In this paper, an input transmission line loss compensation technique using resistive-
capacitive (RC) degeneration is employed in an Indium Phosphide (InP) distributed amplifier …

This article describes the design and measured performance of a linear efficient Ka-band
InP DHBT PA with an IP3/linearity figure of merit (LFOM) of 19.8: 1 at 48 GHz and 14.1: 1 at …

This letter presents a linear wideband differential optical driver amplifier in a 90-nm silicon
germanium (SiGe) bipolar-complementary-metal-oxide-semiconductor (BiCMOS) process …

This paper describes a design of 3 GHz–12 GHz MMIC distributed Low Noise Amplifiers
(LNAs) for Ultra Wideband communications systems. The proposed circuit is a common …

This paper describes the design and measured performance of a linear efficient Ka-band
InP DHBT PA with an IP3/Pdc ratio (LFOM) of 19.8: 1 at 48 GHz and 14.1: 1 at 40 GHz. The …