We analyze the optical emission of single II-VI quantum dots containing 0 or 1 magnetic atom (manganese) and a controlled number of carriers (0,±1 electron). The emission of …
The radiative and nonradiative decay rates of InAs quantum dots are measured by controlling the local density of optical states near an interface. From time-resolved …
We investigate polarization properties of neutral exciton emission in single self-assembled InAs/GaAs quantum dots. The in-plane anisotropy of the confinement potential and strain …
Although semiconductor excitons consist of a fermionic subsystem (electron and hole), they carry an integer net spin similar to Cooper-electron-pairs. While the latter cause …
We introduce dielectric elliptical photonic nanowires to funnel efficiently the spontaneous emission of an embedded emitter into a single optical mode. Inside a wire with a moderate …
K Roszak, VM Axt, T Kuhn, P Machnikowski - Physical Review B—Condensed …, 2007 - APS
We study the phonon influence on the spin of an exciton confined in a quantum dot. A process causing the transition of an initial bright heavy hole exciton spin state to dark states …
GA Narvaez, G Bester, A Franceschetti, A Zunger - Physical Review B …, 2006 - APS
Electron-hole exchange interaction splits the exciton ground state into “dark” and “bright” states. The dynamics of those states depends on the internal relaxation time between bright …
W Rudno-Rudziński, M Gawełczyk… - … Applied Materials & …, 2024 - ACS Publications
Integrating light emitters based on III–V materials with silicon-based electronics is crucial for further increase in data transfer rates in communication systems since the indirect bandgap …
Tellurium impurity centers in ZnSe were individually probed with time-resolved photoluminescence (PL) spectroscopy. Resolution-limited peaks with an ultralow spatial …