The effects of a 45 min anneal at 800 C on the physical properties and microstructure of a five-period GaAs 1− x Bi x/GaAs 1− y Bi y superlattice with y≠ x were studied using room …
GaAs 1− x Bi x has been grown by solid-source molecular beam epitaxy using varying substrate rotation rates. Changes in local bismuth saturation were studied by varying the …
Laser diodes employing strain-compensated GaAs 1− x Bi x/GaAs 1− y P y quantum well (QW) active regions were grown by metalorganic vapor phase epitaxy (MOVPE). High …
J Bork, W Acuna, J Zide - Journal of Vacuum Science & Technology A, 2022 - pubs.aip.org
As a highly mismatched alloy class, dilute bismuthide materials exhibit strong valence band- Bi impurity state interactions, leading to large bandgap bowing parameters and strong spin …
H Kim, K Kim, Y Guan, J Lee, TF Kuech… - Applied Physics …, 2018 - pubs.aip.org
Single junction solar cells employing 30-period and 50-period GaAs 0.965 Bi 0.035/GaAs 0.75 P 0.25 (Eg∼ 1.2 eV) multiple quantum wells (MQWs) as base regions were grown by …
Bismide semiconductor materials and heterostructures are considered a promising candidate for the design and implementation of photonic, thermoelectric, photovoltaic, and …
Nanowires are versatile nanostructures, which allow an exquisite control over bandgap energies and charge carrier dynamics making them highly attractive as building blocks for a …
H Kim, Y Guan, TF Kuech, LJ Mawst - IET Optoelectronics, 2019 - Wiley Online Library
The impact of post‐growth thermal annealing on the internal device parameters such as internal loss (αi), internal differential quantum efficiency () and modal material gain (Γg0J) of …
To push beyond the present limitations on space exploration, researchers must develop long-lasting, lightweight, and efficient energy sources to support long-term missions and in …