[HTML][HTML] Characteristics of OMVPE grown GaAsBi QW lasers and impact of post-growth thermal annealing
Laser diodes employing a strain-compensated GaAs 1− x Bi x/GaAs 1− y P y single quantum
well (SQW) active region were grown by organometallic vapor phase epitaxy (OMVPE). High …
well (SQW) active region were grown by organometallic vapor phase epitaxy (OMVPE). High …
Annealing-induced precipitate formation behavior in MOVPE-grown GaAs1− xBix explored by atom probe tomography and HAADF-STEM
The effects of a 45 min anneal at 800 C on the physical properties and microstructure of a
five-period GaAs 1− x Bi x/GaAs 1− y Bi y superlattice with y≠ x were studied using room …
five-period GaAs 1− x Bi x/GaAs 1− y Bi y superlattice with y≠ x were studied using room …
Impact of rotation rate on bismuth saturation in GaAsBi grown by molecular beam epitaxy
GaAs 1− x Bi x has been grown by solid-source molecular beam epitaxy using varying
substrate rotation rates. Changes in local bismuth saturation were studied by varying the …
substrate rotation rates. Changes in local bismuth saturation were studied by varying the …
Laser diodes employing GaAs1− xBix/GaAs1− yPy quantum well active regions
Laser diodes employing strain-compensated GaAs 1− x Bi x/GaAs 1− y P y quantum well
(QW) active regions were grown by metalorganic vapor phase epitaxy (MOVPE). High …
(QW) active regions were grown by metalorganic vapor phase epitaxy (MOVPE). High …
Impacts of growth conditions on InAlBiAs electrical properties and morphology
As a highly mismatched alloy class, dilute bismuthide materials exhibit strong valence band-
Bi impurity state interactions, leading to large bandgap bowing parameters and strong spin …
Bi impurity state interactions, leading to large bandgap bowing parameters and strong spin …
[HTML][HTML] Single junction solar cell employing strain compensated GaAs0. 965Bi0. 035/GaAs0. 75P0. 25 multiple quantum wells grown by metal organic vapor phase …
Single junction solar cells employing 30-period and 50-period GaAs 0.965 Bi 0.035/GaAs
0.75 P 0.25 (Eg∼ 1.2 eV) multiple quantum wells (MQWs) as base regions were grown by …
0.75 P 0.25 (Eg∼ 1.2 eV) multiple quantum wells (MQWs) as base regions were grown by …
Large-scale atomistic simulations demonstrate dominant alloy disorder effects in multiple quantum wells
M Usman - Physical Review Materials, 2018 - APS
Bismide semiconductor materials and heterostructures are considered a promising
candidate for the design and implementation of photonic, thermoelectric, photovoltaic, and …
candidate for the design and implementation of photonic, thermoelectric, photovoltaic, and …
Towards low-loss telecom-wavelength photonic devices by designing GaBi x As 1− x/GaAs core–shell nanowires
M Usman - Nanoscale, 2019 - pubs.rsc.org
Nanowires are versatile nanostructures, which allow an exquisite control over bandgap
energies and charge carrier dynamics making them highly attractive as building blocks for a …
energies and charge carrier dynamics making them highly attractive as building blocks for a …
Impact of thermal annealing on internal device parameters of GaAs0.965Bi0.035/GaAs0.75P0.25 quantum well lasers
The impact of post‐growth thermal annealing on the internal device parameters such as
internal loss (αi), internal differential quantum efficiency () and modal material gain (Γg0J) of …
internal loss (αi), internal differential quantum efficiency () and modal material gain (Γg0J) of …
Epitaxial III-V-Bismide Materials for Space Power Generation
MA Stevens - 2020 - search.proquest.com
To push beyond the present limitations on space exploration, researchers must develop
long-lasting, lightweight, and efficient energy sources to support long-term missions and in …
long-lasting, lightweight, and efficient energy sources to support long-term missions and in …