Metal-catalyzed semiconductor nanowires: a review on the control of growth directions

SA Fortuna, X Li - Semiconductor Science and Technology, 2010 - iopscience.iop.org
Semiconductor nanowires have become an important building block for nanotechnology.
The growth of semiconductor nanowires using a metal catalyst via the vapor–liquid–solid …

A perspective on nanowire photodetectors: current status, future challenges, and opportunities

VJ Logeeswaran, J Oh, AP Nayak… - IEEE Journal of …, 2011 - ieeexplore.ieee.org
One-dimensional semiconductor nanostructures (nanowires (NWs), nanotubes, nanopillars,
nanorods, etc.) based photodetectors (PDs) have been gaining traction in the research …

First principles simulations of the structural and electronic properties of silicon nanowires

T Vo, AJ Williamson, G Galli - Physical Review B—Condensed Matter and …, 2006 - APS
We report the results of first principles studies of the structural and electronic properties of
hydrogen-passivated silicon nanowires with [001],[011], and [111] growth directions and …

Joining and interconnect formation of nanowires and carbon nanotubes for nanoelectronics and nanosystems

Q Cui, F Gao, S Mukherjee, Z Gu - Small, 2009 - Wiley Online Library
Interconnect formation is critical for the assembly and integration of nanocomponents to
enable nanoelectronics‐and nanosystems‐related applications. Recent progress on joining …

Enhanced thermoelectric figure of merit of individual Si nanowires with ultralow contact resistances

GG Díez, JMS Gordillo, MP Pujadó, M Salleras… - Nano Energy, 2020 - Elsevier
Low-dimensional silicon-based materials have shown a great potential for thermoelectric
applications due to their enhanced figure of merit ZT and high technology compatibility …

Surface charge density of unpassivated and passivated metal-catalyzed silicon nanowires

K Seo, S Sharma, AA Yasseri… - … and solid-state letters, 2006 - iopscience.iop.org
Metal-catalyzed nanowires have previously been proposed as the active elements of field-
effect devices, such as metal oxide field effect transistors and sensors. For these …

Mechanical properties of self-welded silicon nanobridges

M Tabib-Azar, M Nassirou, R Wang, S Sharma… - Applied Physics …, 2005 - pubs.aip.org
Mechanical properties of self-welded [111] single-crystal silicon nanowire bridges grown
between two silicon posts using metal-catalyzed chemical vapor deposition were …

Independently addressable interdigitated nanowires

A Bratkovski, AA Yasseri, RS Williams - US Patent 7,608,905, 2009 - Google Patents
BACKGROUND Nanoscale dipole antennas have been fabricated to be reso nant at optical
frequencies. Because optical antennas link propagating radiation and confined/enhanced …

Effect of growth orientation and surface roughness on electron transport in silicon nanowires

A Svizhenko, PW Leu, K Cho - Physical Review B—Condensed Matter and …, 2007 - APS
We report a study of the effect of growth orientation and surface roughness on electron
transport in small-diameter hydrogen passivated silicon nanowires (NWs). We employ a …

Mechanical resonance of clamped silicon nanowires measured by optical interferometry

M Belov, NJ Quitoriano, S Sharma… - Journal of Applied …, 2008 - pubs.aip.org
The mechanical resonance of laterally grown silicon nanowires measured by an optical
interferometric technique is reported. The lengths and diameters of the nanowires ranged …