The semiconductor ZnO has gained substantial interest in the research community in part
because of its large exciton binding energy (60 meV) which could lead to lasing action …

The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …

Since the successful demonstration of a blue light-emitting diode (LED), potential materials
for making short-wavelength LEDs and diode lasers have been attracting increasing interest …

Liquid/solid interfaces are attracting growing interest not only for applications in catalytic
activities and energy storage,, but also for their new electronic functions in electric double …

A semiconductor laser whose cavities are “self-formed” due to strong optical scattering in
highly disordered gain media is demonstrated. The lasers are made of zinc oxide …

Using infrared irradiation to heat an industrial brass Cu–Zn alloy disk in moderate vacuum,
ZnO nanobelts were directly prepared on a Si substrate. The nanobelts had a single-crystal …

Commercial zinc oxide nanoparticles (20–30 nm) were coated by
aminopropyltriethoxysilane (APTES) under varying environments. Three different processes …

Polarity issues affecting III-V nitride semiconductors are reviewed with respect to their
determination and control. A set of conditions crucial to the polarity control of GaN is …

The dependence of polar direction of GaN film on growth conditions has been investigated
by changing either the group-V/group-III ratio V/III ratio in supplying the source gas or the …

Polarity-controlled ZnO films with an MgO buffer layer were grown on c-plane sapphire by
plasma-assisted molecular-beam epitaxy. Convergent beam electron diffraction results …