GaN and related materials (especially AlGaN) have recently attracted a lot of interest for
applications in high power electronics capable of operation at elevated temperatures …

With the development of energy efficiency technologies such as 5G communication and
electric vehicles, Si-based GaN microelectronics has entered a stage of rapid …

This practically-oriented, all-inclusive guide covers all the major enabling techniques for
current and next-generation cellular communications and wireless networking systems …

The recent shift in focus from defense and government work to commercial wireless efforts
has caused the job of the typical microwave engineer to change dramatically. The modern …

Wide bandgap semiconductors show promise for high-power microwave electronic devices.
Primarily due to low breakdown voltage, it has not been possible to design and fabricate …

A highly efficient and accurate extraction algorithm for the small-signal equivalent-circuit
parameters of a GaN high electron-mobility transistor device is presented. Elements of the …

Unpassivated AlGaN/GaN high-electron-mobility transistors show significant gate lag effects
due to the presence of surface states in the region between the gate and drain contact. Low …

Gallium Nitride (GaN) high electron-mobility transistors (HEMTs) can operate at very high
power-density levels, which may cause a significant temperature rise in the transistor …

AlGaN/GaN high electron mobility transistors (HEMTs) with a range of gate lengths (0.8–1.2
μm) and widths (100–200 μm) were exposed to 40 MeV protons at fluences of 5× 10 9 or 5× …

We report two-dimensional hole gas (2DHG) diamond field-effect transistors (FETs) with
microwave plasma chemical vapor deposition (MPCVD)-regrown p++ diamond (B …