Design considerations for the bottom cell in perovskite/silicon tandems: a terawatt scalability perspective

M Wright, BV Stefani, TW Jones, B Hallam… - Energy & …, 2023 - pubs.rsc.org
Perovskite/silicon tandems have smashed through the 30% efficiency barrier, which
represents a promising step towards high efficiency solar modules. However, the processing …

Progress with defect engineering in silicon heterojunction solar cells

M Wright, BV Stefani, A Soeriyadi… - physica status solidi …, 2021 - Wiley Online Library
Due to the low temperature processing constraint in silicon heterojunction (SHJ) solar cells,
no defect engineering to improve silicon wafer quality is typically incorporated during cell …

Potential induced degradation in c-Si glass-glass modules after extended damp heat stress

F ibne Mahmood, A Kumar, M Afridi, G TamizhMani - Solar Energy, 2023 - Elsevier
Abstract Traditional Glass-Backsheet (GB) photovoltaic (PV) modules have been the
industry standard for a long time, but the Glass-Glass (GG) modules are quickly rising in …

Comprehensive characterization of efficiency limiting defects in the swirl-shaped region of Czochralski silicon

Z Wang, X Zhu, S Yuan, X Yu, D Yang - Solar Energy Materials and Solar …, 2022 - Elsevier
Abstract For Czochralski silicon (Cz-Si) solar cells, swirl-shaped regions in silicon wafers
could lead to efficiency degradation, usually accompanied by hot spots and thermal …

[HTML][HTML] The effect of oxide precipitates on minority carrier lifetime in n-type silicon

JD Murphy, M Al-Amin, K Bothe, M Olmo… - Journal of applied …, 2015 - pubs.aip.org
Supersaturated levels of interstitial oxygen in Czochralski silicon can lead to the formation of
oxide precipitates. Although beneficial from an internal gettering perspective, oxygen-related …

Methods to improve bulk lifetime in n-type Czochralski-grown upgraded metallurgical-grade silicon wafers

R Basnet, FE Rougieux, C Sun… - IEEE Journal of …, 2018 - ieeexplore.ieee.org
This paper investigates the potential of three different methods-tabula rasa (TR), phosphorus
diffusion gettering (PDG), and hydrogenation, for improving the carrier lifetime in n-type …

Effect of metal impurities concentration on electrical properties in N-type Recharged-Czochralski silicon

Z Hu, M Cong, X Zhang, J Li, J Zhang, Y Tan… - Solar Energy Materials …, 2023 - Elsevier
The electrical properties of N-type Recharged-Czochralski (RCz) silicon solar cells are
significantly affected by the concentration of metal impurities in the silicon materials. In this …

Review of injection dependent charge carrier lifetime spectroscopy

Y Zhu, Z Hameiri - Progress in Energy, 2021 - iopscience.iop.org
Abstract Characterization and identification of recombination active defects in photovoltaic
(PV) materials are essential for improving the performance of solar cells, hence, reducing …

On the nature of striations in n-type silicon solar cells

A Le Donne, S Binetti, V Folegatti, G Coletti - Applied physics letters, 2016 - pubs.aip.org
In n-type Czochralski silicon (Cz-Si) wafer, swirl shaped regions with low lifetime (known as
striations) can cause degradation up to 1% absolute or even more in homojunction industrial …

Impact of pre-fabrication treatments on n-type UMG wafers for 21% efficient silicon heterojunction solar cells

R Basnet, W Weigand, JY Zhengshan, C Sun… - Solar Energy Materials …, 2020 - Elsevier
Silicon heterojunction solar cells achieve high conversion efficiency due to the excellent
surface passivation provided by the hydrogenated intrinsic amorphous silicon films …