An X-Band SiGe BiCMOS Triple-Cascode LNA With Boosted Gain and P1dB
M Davulcu, C Çalışkan, İ Kalyoncu… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
In this brief, the design, implementation, and experimental results of an X-band low noise
amplifier (LNA) implemented in 0.13 μm SiGe BiCMOS process technology is reported. The …
amplifier (LNA) implemented in 0.13 μm SiGe BiCMOS process technology is reported. The …
A multiregion approach to modeling the base-collector junction capacitance
T Nardmann, M Schroter… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
The junction capacitance of heterojunction bipolar transistors (HBTs) is commonly modeled
based on the theory of the pn-homojunction with constant doping levels, made more flexible …
based on the theory of the pn-homojunction with constant doping levels, made more flexible …
Performance characterization of a microwave transistor subject to the noise and matching requirements
F Güneş, S Demirel - International Journal of Circuit Theory and …, 2016 - Wiley Online Library
In this paper, the gain GT of a microwave transistor is expressed analytically in terms of the
mismatchings (Vin≥ 1, Vout≥ 1) at the ports, noise figure F≥ Fmin and the [z]‐parameter …
mismatchings (Vin≥ 1, Vout≥ 1) at the ports, noise figure F≥ Fmin and the [z]‐parameter …
Survey and Design of Microwave Low-Noise Amplifiers
O Yaari, P Virdee - 2021 - digitalcommons.calpoly.edu
This project is a contest entry in the Wide In-band Receiver area of the 2020 International
Microwave Symposium, 5G Low Noise Amplifier Competition [1]. The project includes RF …
Microwave Symposium, 5G Low Noise Amplifier Competition [1]. The project includes RF …
SiGe BiCMOS ICs for X-Band 7-Bit T/R module with high precision amplitude and phase control
M Davulcu - 2015 - research.sabanciuniv.edu
Over the last few decades, phased array radar systems had been utilizing Transmit/Receive
(T/R) modules implemented in III-V semiconductor based technologies. However, their high …
(T/R) modules implemented in III-V semiconductor based technologies. However, their high …