Nanometre-scale semiconductor devices have been envisioned as next-generation
technologies with high integration and functionality. Quantum dots, or the so-called'artificial …

III-V compound semiconductors (SC) have played a crucial role in the development of
optoelectronic devices for a broad range of applications. Major applications of InP or GaAs …

Infrared Detectors provides comprehensive coverage of this important aspect of infrared
technology, including details of recent research efforts directed toward improving the …

This new edition of Infrared and Terahertz Detectors provides a comprehensive overview of
infrared and terahertz detector technology, from fundamental science to materials and …

Hitherto, two distinct families of multielement detector arrays have been used for infrared (IR)
imaging system applications: linear arrays for scanning systems (first generation) and two …

Van der Waals' two-dimensional (2D) material heterostructure engineering offers an
effective strategy for the design of multifunctional and high-performance optoelectronic …

Infrared photodetectors are finding widespread applications in telecommunication, motion
detection, chemical sensing, thermal imaging and bio‐medical imaging, etc. The …

Quantum dot infrared photodetectors (QDIPs) have made significant progress after their
early demonstration about a decade ago. We review the progress made by QDIP technology …

Third-generation infrared (IR) systems are being developed nowadays. In the common
understanding, these systems provide enhanced capabilities-like larger numbers of pixels …

The authors report a room temperature operating InAs quantum-dot infrared photodetector
grown on InP substrate. The self-assembled InAs quantum dots and the device structure …