Millimeter-wave integrated circuits in 65-nm CMOS
M Varonen, M Karkkainen, M Kantanen… - IEEE Journal of Solid …, 2008 - ieeexplore.ieee.org
We present the design and measurement results of millimeter-wave integrated circuits
implemented in 65-nm baseline CMOS. Both active and passive test structures were …
implemented in 65-nm baseline CMOS. Both active and passive test structures were …
Terahertz imaging detectors in CMOS technology
E Öjefors, A Lisauskas, D Glaab, HG Roskos… - Journal of Infrared …, 2009 - Springer
Square-law power detection circuits with on-chip antennas and amplifiers are presented for
the detection of 0.65-THz radiation in a low-cost 0.25-μ m CMOS technology. The circuit …
the detection of 0.65-THz radiation in a low-cost 0.25-μ m CMOS technology. The circuit …
W-band active down-conversion mixer in bulk CMOS
N Zhang, H Xu, HT Wu - IEEE Microwave and wireless …, 2009 - ieeexplore.ieee.org
A W-band (76-77 GHz) active down-conversion mixer has been demonstrated using low
leakage (higher VT) NMOS transistors of a 65-nm digital CMOS process with 6 metal levels …
leakage (higher VT) NMOS transistors of a 65-nm digital CMOS process with 6 metal levels …
60 GHz transmitter circuits in 65nm CMOS
A Valdes-Garcia, S Reynolds… - 2008 IEEE radio …, 2008 - ieeexplore.ieee.org
This work presents fundamental building blocks for a 60 GHz transmitter front-end. The
circuits are implemented in a 65 nm bulk CMOS technology, operate from a 1.2 V supply …
circuits are implemented in a 65 nm bulk CMOS technology, operate from a 1.2 V supply …
Symmetric Offset Stack Balun in Standard 0.13- CMOS Technology for Three Broadband and Low-Loss Balanced Passive Mixer Designs
HK Chiou, JY Lin - IEEE transactions on microwave theory and …, 2011 - ieeexplore.ieee.org
This paper presents symmetric offset stack Marchand single and dual baluns that are
designed, analyzed, and implemented in a 0.18-μm CMOS process to verify the feasibility …
designed, analyzed, and implemented in a 0.18-μm CMOS process to verify the feasibility …
NMOS device optimization for the design of a W-band double-balanced resistive mixer
This letter describes the implementation of NMOS devices in a passive ring mixer whose
operating frequency reaches device's cut-off frequency. Conversion gain, linearity and …
operating frequency reaches device's cut-off frequency. Conversion gain, linearity and …
A CMOS focal-plane array for heterodyne terahertz imaging
UR Pfeiffer, E Ojefors, A Lisaukas… - 2009 IEEE Radio …, 2009 - ieeexplore.ieee.org
In this paper we present a focal-plane array (FPA) for heterodyne imaging at 0.65-THz in a
low-cost 0.25-mum CMOS process technology. The 3times5 pixel array is fully integrated on …
low-cost 0.25-mum CMOS process technology. The 3times5 pixel array is fully integrated on …
An 80 GHz High Gain Double-Balanced Active Up-Conversion Mixer Using 0.18 SiGe BiCMOS Technology
This letter reports the performance of a W-band (75-110 GHz) high gain double-balanced
active up-conversion mixer fabricated in a low-cost 200 GHz f T and f max 0.18 μm SiGe …
active up-conversion mixer fabricated in a low-cost 200 GHz f T and f max 0.18 μm SiGe …
A W-band highly linear SiGe BiCMOS double-balanced active up-conversion mixer using multi-tanh triplet technique
This letter presents a W-band highly linear double-balanced active up-conversion mixer
implemented in a low-cost 200 GHz f T and f max 0.18¿ m SiGe BiCMOS process …
implemented in a low-cost 200 GHz f T and f max 0.18¿ m SiGe BiCMOS process …
Q-band pHEMT and mHEMT subharmonic Gilbert upconversion mixers
JY Su, C Meng, PY Wu - IEEE microwave and wireless …, 2009 - ieeexplore.ieee.org
This letter makes a comparison between Q-band 0.15 mum pseudomorphic high electron
mobility transistor (pHEMT) and metamorphic high electron mobility transistor (mHEMT) …
mobility transistor (pHEMT) and metamorphic high electron mobility transistor (mHEMT) …