Repeated off-chip memory accesses to DRAM drive up operating power for data-intensive
applications, and SRAM technology scaling and leakage power limits the efficiency of …

Modern data-centric computing applications are increasingly demanding in terms of memory
density and performance. The cross-point memory architecture based on the two-terminal …

This study investigates the effect of N-doping on the nanoscale (d= 30 nm) BTe ovonic
threshold switch (OTS) device to achieve ideal selector characteristics in terms of leakage …

Stateful logic is a digital processing-in-memory (PIM) technique that could address von
Neumann memory bottleneck challenges while maintaining backward compatibility with …

We present a finite-element model for the confined-structure device integrating a phase
change memory (PCM) and an ovonic threshold switch (OTS) selector. In this model, the …

The success of memory technology is of vital importance in order to handle emerging mass
amount of data in our daily lives. Let us take one example here: The IBM summit is the …

This study explores the reliability of a phase‐change memory (PCM) cointegrated with an
ovonic threshold switching (OTS) selector (one selector and one memory 1S1R structure) …

We demonstrated, for the first time, a multi-level phase change memory/selector cell which
can be operated without initialization or iterative verify, showing the potential for future cost …

3-D cross-point phase-change memory (PCM) is considered one of the most promising
candidates for storage-class memory. However, coupled IR drop and leakage currents …

A constant current stress scheme is implemented for endurance study on OTS-PCM devices
for the first time. It provides a feasible method to estimate the read/write endurance for cross …