The mutual and injection locking characteristics of two integrated lasers are compared, both
on and off-chip. In this study, two integrated single facet slotted Fabry–Pérot lasers are …

This paper presents our research on quantum well intermixing (QWI) of InP-based
AlGaInAs/AlGaInAs multi-quantum wells using impurity-free vacancy-disordering (IFVD) and …

A regrowth-free single-mode laser that is made using standard UV photolithography is
reported. The laser achieves a single-mode side-mode suppression ratio of 37 dB, linewidth …

An inverse scattering method is used to design regrowth-free single-mode lasers, using etch
depth insensitive pits as perturbations in the laser cavity. These pit perturbations are circular …

P‐substrate AlGaInAs/InP lasers are enabled using an internal carbon‐doped layer to block
Zn‐diffusion. These inverted lasers are developed for the aim of further monolithic vertical …

A single mode laser based on novel deep etched V-notch reflectors is presented in this
paper. The reported device has a stable single mode operation and a side mode …

With the development of Internet technology, the number of Internet users and Internet traffic
has increased exponentially every year, and there is a large-scale demand for photonic …

Data usage continues to rise exponentially with user demand, and the bandwidth of optical
communications is reaching its limit. Spectrally efficient advanced modulation formats are …

The mutual and injection locking characteristics of two integrated lasers are compared, both
on and off-chip. In this study, two integrated single facet slotted Fabry–Pérot lasers are …

Inverse Scattering Method Design of Regrowth-free Single- mode Semiconductor Lasers for
Monolithic Integration Page 1 ITu4B.4.pdf Advanced Photonics Congress (BGPP, IPR, NP …