Growing demand for high energy storage density is driving lithium-ion batteries (LIBs) to
increasingly large design sizes, and the enhancement of battery charging and discharging …

Highly stable IGZO thin-film transistors derived from atomic layer deposition are crucial for
the semiconductor industry. However, unavoidable defect generation during high …

Indium-tin-zinc oxide (ITZO) thin-film transistor (TFT) technology holds promise for achieving
high mobility and offers significant opportunities for commercialization. This paper provides …

An ultrathin atomic-layer-deposited (ALD) AlO x gate insulator (GI) was implemented for self-
aligned top-gate (SATG) amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). Although …

Achieving high mobility and reliability in atomic layer deposition (ALD)-based IGZO thin-film
transistors (TFTs) with an amorphous phase is vital for practical applications in relevant …

This study examines the effect of the annealing time of the Y2O3 passivation layer on the
electrical performances and bias stabilities of sol–gel-deposited SnO2 thin-film transistors …

Inorganic mini-LEDs (mLEDs) and micro-LEDs (μLEDs) have ultrahigh luminance and long
lifetimes, and are challenging liquid crystal displays (LCDs) and organic light-emitting diode …

In the past few years, there has been growing interest in ultraviolet (UV) photodetectors for
various applications. A key requirement for UV photodetectors is the ability to exclusively …

Maintaining gate bias stability under negative bias stress (NBS) and positive bias stress
(PBS) is a long-standing issue in amorphous oxide semiconductor thin-film transistors …

We have investigated the degradation mechanism of solution-processed indium–gallium–
zinc-oxide (IGZO) thin-film transistors. The threshold voltage shift (Δ V th) followed a linear …