Indium migration control on patterned substrates for optoelectronic device applications
AR Pratt, RL Williams, CE Norman, MR Fahy… - Applied physics …, 1994 - pubs.aip.org
Strained layer InGaAs/GaAs quantum wells have been grown by molecular-beam epitaxy on
patterned (100) GaAs substrates. Indium migration away from the facets of patterned mesas …
patterned (100) GaAs substrates. Indium migration away from the facets of patterned mesas …
Transform-limited picosecond optical pulses from a mode-locked InGaAs/AlGaAs QW laser with integrated passive waveguide cavity and QW modulator
LR Brovelli, R Germann, JP Reithmaier… - IEEE photonics …, 1993 - ieeexplore.ieee.org
Using a novel single-top molecular beam epitaxy growth technology on nonplanar
substrates, an InGaAs/AlGaAs laser amplifier has been integrated with a 4-mm-long passive …
substrates, an InGaAs/AlGaAs laser amplifier has been integrated with a 4-mm-long passive …
Adatom migration effects during molecular beam epitaxial growth of InGaAs/GaAs quantum wells on patterned substrates with vertical sidewalls: Blue shift in …
J Phillips, K Kamath, J Singh, P Bhattacharya - Applied physics letters, 1996 - pubs.aip.org
We have studied the blue shift in photoluminescence emission energy of pseudomorphic
InGaAs/GaAs quantum wells grown on patterned (001) GaAs substrates with grooves and …
InGaAs/GaAs quantum wells grown on patterned (001) GaAs substrates with grooves and …
Multiwavelength laser array by chemical beam epitaxy on patterned InP substrates
A multiwavelength laser array has been obtained through growth on patterned InP
substrates using chemical beam epitaxy. This technique makes use of interfacet migration of …
substrates using chemical beam epitaxy. This technique makes use of interfacet migration of …
Large blueshift in the photoluminescence of pseudomorphic InGaAs/GaAs quantum wells grown in patterned (100) GaAs grooves and ridges with vertical sidewalls
K Kamath, J Phillips, J Singh… - Journal of Vacuum …, 1996 - pubs.aip.org
Molecular beam epitaxial growth of pseudomorphic InGaAs quantum wells on (100) GaAs
substrates, patterned with vertical sidewalls using reactive ion etching, were studied …
substrates, patterned with vertical sidewalls using reactive ion etching, were studied …
The substrate orientation dependence of In atom incorporation during the growth of (In, Ga) As on GaAs by molecular-beam epitaxy
K Pak, MR Fahy, XM Zhang, BA Joyce - Journal of crystal growth, 1998 - Elsevier
This paper reports on a comparison of the relative extent of desorption of indium atoms
during growth by molecular-beam epitaxy of (In, Ga) As films between GaAs confinement …
during growth by molecular-beam epitaxy of (In, Ga) As films between GaAs confinement …
Patterned substrate overgrowth for optoelectronic device integration using chemical beam epitaxy (CBE)
InGaAs/InP layers are grown on (100) substrates patterned using chemically assisted ion
beam etching (CAIBE) to produce undercut mesas aligned along the〈 011〉 direction …
beam etching (CAIBE) to produce undercut mesas aligned along the〈 011〉 direction …
Selectively varying the number of active quantum wells in integrated devices using only one growth step
CE Norman, AR Pratt, MR Fahy… - Circular-Grating …, 1995 - spiedigitallibrary.org
The phenomenon of indium migration off the sidewalls of features on patterned GaAs
substrates during MBE growth has been studied. The level of migration depends strongly on …
substrates during MBE growth has been studied. The level of migration depends strongly on …
Strained InGaAs ridge quantum wires structure grown by molecular beam epitaxy on nonplanar substrate
Z Niu, Z Zhou, Y Lin, Y Zhang, X Li… - Semiconductor Lasers …, 1996 - spiedigitallibrary.org
A new type of strained InGaAs/GaAs ridge quantum wires (QWRs) structure has been
proposed and fabricated firstly by MBE growth on patterned substrate. High resolution …
proposed and fabricated firstly by MBE growth on patterned substrate. High resolution …