Effects of varying the fin width, fin height, gate dielectric material, and gate length on the DC and RF performance of a 14-nm SOI FinFET structure
The FinFET architecture has attracted growing attention over the last two decades since its
invention, owing to the good control of the gate electrode over the conductive channel …
invention, owing to the good control of the gate electrode over the conductive channel …
FinFET to GAA MBCFET: A Review and Insights
This review article presents a journey from Fin-shaped field effect transistor (FinFET) to gate-
all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling …
all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling …
Effect of gamma irradiation on the physical properties of MoS 2 monolayer
CP Chavda, A Srivastava, E Vaughan… - Physical Chemistry …, 2023 - pubs.rsc.org
Two-dimensional transition metal dichalcogenides (2D-TMDs) have been proposed as
novel optoelectronic materials for space applications due to their relatively light weight …
novel optoelectronic materials for space applications due to their relatively light weight …
Comparative performance of the ultra-short channel technology for the DG-FinFET characteristics using different high-k dielectric materials
N Bourahla, A Bourahla, B Hadri - Indian Journal of Physics, 2021 - Springer
The downscaling of the SOI-MOSFET device has an important role of the advanced
technology in the semiconductor industry, so the researchers aim to find the structure which …
technology in the semiconductor industry, so the researchers aim to find the structure which …
Temperature-dependent threshold voltage extraction of FinFETs using noise measurements
Y Wu, X Chi, F Wang, X Liu, J Liu… - IEEE Transactions …, 2022 - ieeexplore.ieee.org
In this article, a temperature-dependent threshold voltage extraction method based on noise
measurement is proposed. This method induces a mathematical solution for acquiring …
measurement is proposed. This method induces a mathematical solution for acquiring …
Temperature investigation of a novel 3nm TF-Bulk FinFET for improved performance
MP Kashyap, R Chaujar - 2020 IEEE 20th International …, 2020 - ieeexplore.ieee.org
In this investigation, a novel Truncated Fin (TF) Junctionless (JL) bulk FinFET is compared
over it's conventional structure. This paper is the analysis of highperformance temperature …
over it's conventional structure. This paper is the analysis of highperformance temperature …
Development of adhesive wafer bonding technology
MY Fomichev, MA Makhiboroda… - … IEEE Conference of …, 2021 - ieeexplore.ieee.org
This paper shows the result of working out the operations of permanent bonding of Si-Si
wafers and temporary bonding of Si-quartz wafers. The equipment was selected for the …
wafers and temporary bonding of Si-quartz wafers. The equipment was selected for the …
Impact of High-k Dielectric Material on Ultra-Short-DG-FinFET Performance
N Bourahla, B Hadri, NEI Boukortt… - … Systems and Services …, 2021 - ieeexplore.ieee.org
The miniaturization of the SOI-MOSFET transistor reducesthe gate electrostatic control and
reliability of the integrated circuit (IC). The fabrication of the transistor was reaching 7nm, but …
reliability of the integrated circuit (IC). The fabrication of the transistor was reaching 7nm, but …
Effects of the Gate Dielectric Material on the Performance of a 14-nm SOI FinFET
Fin field-effect transistors (FinFETs) are a type of device that has received great attention in
recent years, owing to their ability to scale down, low cost, and high efficiency for advanced …
recent years, owing to their ability to scale down, low cost, and high efficiency for advanced …
Analysis of a Novel Nanoscale Vacuum Channel TF-FinFET
MP Kashyap, S Saini, R Chaujar - Silicon, 2021 - Springer
Concerned work is solely dedicated to the optimized characteristics of Nanoscale vacuum
channel TF (Truncated fin)-FinFET at gate length of 7 nm. NVCTF-FinFET has its own …
channel TF (Truncated fin)-FinFET at gate length of 7 nm. NVCTF-FinFET has its own …