In this paper, an overview of the influence of various modifications on ZnO-based RRAM has
been conducted. Firstly, the motivation for creating new memory technology is presented …

Resistive switching (RS) behavior can serve as a building block in the development of non-
volatile memory and neuromorphic computing applications. Thus far, various device …

Doping and interface engineering are important schemes to address the variation problem
which hinders the application of memristors. In this study, combination of doping and …

In contrast to classical charge-based memories, the binary information in redox-based
resistive switching devices is decoded by a change of the atomic configuration rather than …

Memristors can be used to mimic synaptic behavior in artificial neural networks, which
makes them a key component in neuromorphic computing and holds promise for advancing …

The paper explores the impact of the surface roughness (SR) and other material properties
of metal electrodes on the statistical distributions of the switching threshold voltages, V form …

Memristor devices have attracted tremendous interest due to different applications ranging
from nonvolatile data storage to neuromorphic computing units. Exploring the role of surface …

By doping a dielectric layer material and improving the device's structure, the electrical
characteristics of a memristor can be effectively adjusted, and its application field can be …

The surface effects of ZnO-based resistive random-access memory (ReRAM) were
investigated using various electrodes. Pt electrodes were found to have better performance …

In this work, we report on the observation of resistive switching (RS) in the nanocrystalline
tellurium oxide (TeO x) in ITO/TeO x/Ag device configuration. The TeO x films grown in an O …