The emergence and prospects of deep-ultraviolet light-emitting diode technologies
Abstract By alloying GaN with AlN the emission of AlGaN light-emitting diodes can be tuned
to cover almost the entire ultraviolet spectral range (210–400 nm), making ultraviolet light …
to cover almost the entire ultraviolet spectral range (210–400 nm), making ultraviolet light …
Recent progress on the electronic structure, defect, and doping properties of Ga2O3
ABSTRACT Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
Synthesis and applications of III–V nanowires
E Barrigón, M Heurlin, Z Bi, B Monemar… - Chemical …, 2019 - ACS Publications
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …
dimensional examples, have developed into one of the most intensely studied fields of …
Germicidal ultraviolet LEDs: A review of applications and semiconductor technologies
Ultraviolet light emitting diodes (UV LEDs) are one of the most promising technologies for
preventing future pandemics, improving health outcomes, and disinfecting water sources …
preventing future pandemics, improving health outcomes, and disinfecting water sources …
Doping of III-nitride materials
P Pampili, PJ Parbrook - Materials Science in Semiconductor Processing, 2017 - Elsevier
In this review paper we will report the current state of research regarding the doping of III-
nitride materials and their alloys. GaN is a mature material with both n-type and p-type …
nitride materials and their alloys. GaN is a mature material with both n-type and p-type …
Electronic properties of the residual donor in unintentionally doped β-Ga2O3
NT Son, K Goto, K Nomura, QT Thieu… - Journal of Applied …, 2016 - pubs.aip.org
Electron paramagnetic resonance was used to study the donor that is responsible for the n-
type conductivity in unintentionally doped (UID) β-Ga 2 O 3 substrates. We show that in as …
type conductivity in unintentionally doped (UID) β-Ga 2 O 3 substrates. We show that in as …
[HTML][HTML] Al-rich AlGaN based transistors
AG Baca, AM Armstrong, BA Klein… - Journal of Vacuum …, 2020 - pubs.aip.org
Research results for AlGaN-channel transistors are reviewed as they have progressed from
low Al-content and long-channel devices to Al-rich and short-channel RF devices. Figure of …
low Al-content and long-channel devices to Al-rich and short-channel RF devices. Figure of …
A brief review of III-nitride UV emitter technologies and their applications
M Kneissl - III-Nitride Ultraviolet Emitters: Technology and …, 2016 - Springer
This chapter provides a brief introduction to group III-nitride ultraviolet light emitting diode
(LED) technologies and an overview of a number of key application areas for UV-LEDs. It …
(LED) technologies and an overview of a number of key application areas for UV-LEDs. It …
Preparation of degenerate n-type AlxGa1− xN (0< x≤ 0.81) with record low resistivity by pulsed sputtering deposition
Y Nishikawa, K Ueno, A Kobayashi… - Applied Physics Letters, 2023 - pubs.aip.org
Highly conductive AlGaN alloys hold a great technological potential, wherein the
degenerate n-type doping is key in reducing parasitic resistances in electronic and opto …
degenerate n-type doping is key in reducing parasitic resistances in electronic and opto …
Electronic properties of Si-doped AlxGa1− xN with aluminum mole fractions above 80%
The dependence of the activation energy as well as the energetic levels of the neutral
charge state and the DX center of the Si donor in Al x Ga 1− x N: Si samples on aluminum …
charge state and the DX center of the Si donor in Al x Ga 1− x N: Si samples on aluminum …