Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor
J Chen, MY Sun, ZH Wang, Z Zhang, K Zhang… - Nano-Micro Letters, 2024 - Springer
Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDs) allow for atomic-
scale manipulation, challenging the conventional limitations of semiconductor materials …
scale manipulation, challenging the conventional limitations of semiconductor materials …
An Ultrasensitive Bi2O2Se/In2S3 Photodetector with Low Detection Limit and Fast Response toward High-Precision Unmanned Driving
M Chen, X Chen, Z Wu, Z Huang, W Gao, M Yang… - ACS …, 2024 - ACS Publications
The machine vision utilized in unmanned driving systems must possess the ability to
accurately perceive scenes under low-light illumination conditions. To achieve this …
accurately perceive scenes under low-light illumination conditions. To achieve this …
Integrated Pristine van der Waals Homojunctions for Self‐Powered Image Sensors
Van der Waals junctions hold significant potentials for various applications in multifunctional
and low‐power electronics and optoelectronics. The multistep device fabrication process …
and low‐power electronics and optoelectronics. The multistep device fabrication process …
Achieving a Noise Limit with a Few-layer WSe2 Avalanche Photodetector at Room Temperature
X Li, J Chen, F Yu, X Chen, W Lu, G Li - Nano Letters, 2024 - ACS Publications
We engineered a two-dimensional Pt/WSe2/Ni avalanche photodetector (APD) optimized for
ultraweak signal detection at room temperature. By fine-tuning the work functions, we …
ultraweak signal detection at room temperature. By fine-tuning the work functions, we …
Contact Geometry-Dependent Excitonic Emission in Mixed-Dimensional van der Waals Heterostructures
H Song, S Ji, SG Kang, N Shin - ACS nano, 2024 - ACS Publications
Manipulation of excitonic emission in two-dimensional (2D) materials via the assembly of
van der Waals (vdW) heterostructures unlocks numerous opportunities for engineering their …
van der Waals (vdW) heterostructures unlocks numerous opportunities for engineering their …
[HTML][HTML] Room-Temperature (RT) Extended Short-Wave Infrared (e-SWIR) Avalanche Photodiode (APD) with a 2.6 µm Cutoff Wavelength
Highly sensitive infrared photodetectors are needed in numerous sensing and imaging
applications. In this paper, we report on extended short-wave infrared (e-SWIR) avalanche …
applications. In this paper, we report on extended short-wave infrared (e-SWIR) avalanche …
Vertically stacked van der Waals heterostructures for three-dimensional circuitry elements
Abstract Two-dimensional (2D) layered materials have been actively explored for electronic
device applications because of their ability to form van der Waals heterostructures with …
device applications because of their ability to form van der Waals heterostructures with …
Enhancing Linearity of Light Response in Avalanche Photodiodes by Suppressing Electrode Size Effect
H Gan, J Yu, X Wang - Sensors, 2024 - mdpi.com
The nonlinear characteristics of avalanche photodiodes (APDs) inhibit their performance in
high-speed communication systems, thereby limiting their widespread application as optical …
high-speed communication systems, thereby limiting their widespread application as optical …
Bilateral Geiger mode avalanche in InSe Schottky photodiodes
Y Chen, D Zhao, T Hu, H Cao, X Zhao, Y Jia, X Wang… - 2024 - researchsquare.com
Avalanche photodiodes (APDs) are crucial in emerging weak light signal detection fields.
The major challenge of high-performance APDs is to achieve both an ultrahigh gain and …
The major challenge of high-performance APDs is to achieve both an ultrahigh gain and …