Memory device having staggered memory operations

L Lai, WS Richardson, CA Bellows - US Patent 8,190,808, 2012 - Google Patents
A memory system includes logical banks divided into sub-banks or collections of sub-banks.
The memory system responds to memory-access requests (eg, read and write) directed to a …

Micro-threaded memory

FA Ware, CE Hampel, WS Richardson… - US Patent …, 2013 - Google Patents
A micro-threaded memory device. A plurality of storage banks are provided, each including
a plurality of rows of storage cells and having an access restriction in that at least a minimum …

Integrated circuit memory system having dynamic memory bank count and page size

S Woo, M Ching, CA Bellows, WS Richardson… - US Patent …, 2007 - Google Patents
(57) ABSTRACT A memory system includes a master device. Such as a graphics controller
or processor, and an integrated circuit memory device operable in dynamic memory bank …

An energy-efficient and high-speed mobile memory I/O interface using simultaneous bi-directional dual (base+ RF)-band signaling

GS Byun, Y Kim, J Kim, SW Tam… - IEEE Journal of Solid …, 2011 - ieeexplore.ieee.org
A fully-integrated 8.4 Gb/s 2.5 pJ/b mobile memory I/O transceiver using simultaneous
bidirectionaldual band signaling is presented. Incorporating both RF-band and baseband …

Dual-loop two-step ZQ calibration for dynamic voltage–frequency scaling in LPDDR4 SDRAM

CK Lee, J Lee, K Kim, JS Heo, JH Baek… - IEEE Journal of Solid …, 2018 - ieeexplore.ieee.org
This paper presents a dual-loop two-step ZQ calibration scheme with a 20-nm DRAM
process to support dedicated supply voltages (and). The proposed calibration scheme …

Integrated circuit memory device having dynamic memory bank count and page size

S Woo, M Ching, CA Bellows, WS Richardson… - US Patent …, 2010 - Google Patents
An integrated circuit memory device has a storage array with an adjustable number of
memory banks, a row of sense ampli fiers to access storage cells in the storage array; and …

A 1.2V 23nm 6F2 4Gb DDR3 SDRAM with local-bitline sense amplifier, hybrid LIO sense amplifier and dummy-less array architecture

KN Lim, WJ Jang, HS Won, KY Lee… - … Solid-State Circuits …, 2012 - ieeexplore.ieee.org
We present a sensing scheme with local bitline sense amplifier (L-BLSA) for sub-1V DRAM
core operation, which activates a low-Vt latch locally in time, the same as [1] but shares a …

Multi-column addressing mode memory system including an integrated circuit memory device

FA Ware, L Lai, CA Bellows, WS Richardson - US Patent 7,280,428, 2007 - Google Patents
4,670,745 A 6/1987 O'Malley et al. 5,751,657 A 5, 1998 Hotta 4,698,788 A 10/1987
Flannagan et al. 5,787,267 A 7/1998 Leung et al. 4,700,328 A 10/1987 Burghard 5,793,998 …

Multi-column addressing mode memory system including an integrated circuit memory device

FA Ware, L Lai, CA Bellows, WS Richardson - US Patent 7,505,356, 2009 - Google Patents
US PATENT DOCUMENTS 5,614,855 A 3, 1997 Lee et al. 5,652,870 A 7/1997 Yamasaki et
al. 4,542.483. A 9/1985 Procyk 5,655,113 A 8/1997 Leung et al. 4,569,036 A 2/1986 Fuji et …

An enhanced statistical analysis method for I/O links considering supply voltage fluctuations and intersymbol interference

J Kim, J Lee, E Park, Y Park - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
Statistical link analysis methods were previously developed for effective computation of bit
error rate due to intersymbol interference (ISI). In addition to ISI, supply voltage fluctuations …