Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects
GaN technology is not only gaining traction in power and RF electronics but is also rapidly
expanding into other application areas including digital and quantum computing electronics …
expanding into other application areas including digital and quantum computing electronics …
Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective
Power semiconductor devices are fundamental drivers for advances in power electronics,
the technology for electric energy conversion. Power devices based on wide-bandgap …
the technology for electric energy conversion. Power devices based on wide-bandgap …
Interfacial thermal conductance across room-temperature-bonded GaN/diamond interfaces for GaN-on-diamond devices
The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an
ideal material for high-power and high-frequency electronics applications, such as wireless …
ideal material for high-power and high-frequency electronics applications, such as wireless …
Prospects for wide bandgap and ultrawide bandgap CMOS devices
Power and RF electronics applications have spurred massive investment into a range of
wide and ultrawide bandgap semiconductor devices which can switch large currents and …
wide and ultrawide bandgap semiconductor devices which can switch large currents and …
Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review
This article critically reviews the architectural novelties, emerging materials (substrate,
buffer, barrier & contact materials), technological advancements, processing techniques …
buffer, barrier & contact materials), technological advancements, processing techniques …
Hydrogen-terminated diamond MOSFETs on (0 0 1) single crystal diamond with state of the art high RF power density
C Yu, C Zhou, J Guo, Z He, M Ma, H Yu… - Functional …, 2022 - Taylor & Francis
Diamond field-effect transistor (FET) has great application potential for high frequency and
high power electronic devices. In this work, diamond FETs were fabricated on (0 0 1) single …
high power electronic devices. In this work, diamond FETs were fabricated on (0 0 1) single …
A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices
Fundamental research and development of ultra-wide bandgap (UWBG) semiconductor
devices are under way to realize next-generation power conversion and wireless …
devices are under way to realize next-generation power conversion and wireless …
Ultra-Wide Band Gap Ga2O3-on-SiC MOSFETs
Ultra-wide band gap semiconductor devices based on β-phase gallium oxide (Ga2O3) offer
the potential to achieve higher switching performance and efficiency and lower …
the potential to achieve higher switching performance and efficiency and lower …
A review of thermoreflectance techniques for characterizing wide bandgap semiconductors' thermal properties and devices' temperatures
Thermoreflectance-based techniques, such as pump–probe thermoreflectance (pump–
probe TR) and thermoreflectance thermal imaging (TTI), have emerged as the powerful and …
probe TR) and thermoreflectance thermal imaging (TTI), have emerged as the powerful and …
Thermal transport and mechanical stress mapping of a compression bonded GaN/diamond interface for vertical power devices
W Delmas, A Jarzembski, M Bahr… - … Applied Materials & …, 2024 - ACS Publications
Bonding diamond to the back side of gallium nitride (GaN) electronics has been shown to
improve thermal management in lateral devices; however, engineering challenges remain …
improve thermal management in lateral devices; however, engineering challenges remain …