Reversed bias Pt/nanostructured ZnO Schottky diode with enhanced electric field for hydrogen sensing
In this paper, the effect of electric field enhancement on Pt/nanostructured ZnO Schottky
diode based hydrogen sensors under reverse bias condition has been investigated. Current …
diode based hydrogen sensors under reverse bias condition has been investigated. Current …
Comprehensive analysis of metal modulated epitaxial GaN
H Ahmad, K Motoki, EA Clinton… - … applied materials & …, 2020 - ACS Publications
While metal modulated epitaxy (MME) has been shown useful for hyperdoping, where hole
concentrations 40 times higher than other techniques have been demonstrated, and the …
concentrations 40 times higher than other techniques have been demonstrated, and the …
Current–voltage characteristics and deep-level study of GaN nanorod Schottky-diode-based photodetector
Understanding the metal/semiconductor interface is very significant for real-time
optoelectronic device applications. In particular, the presence of interface states and other …
optoelectronic device applications. In particular, the presence of interface states and other …
Flake-like ZnO nanostructures density for improved absorption using electrochemical deposition in UV detection
Ultra violet photodetector based on flake-like ZnO with different flakes density were
electrochemically deposited on silicon Si (1 1 1) substrate were fabricated. The deposition …
electrochemically deposited on silicon Si (1 1 1) substrate were fabricated. The deposition …
Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes
The electrical behaviour of Schottky barrier diodes realized on vertically standing individual
GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual …
GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual …
Single nanowire-based UV photodetectors for fast switching
Relatively long (30 µm) high quality ZnO nanowires (NWs) were grown by the vapor-liquid-
solid (VLS) technique. Schottky diodes of single NW were fabricated by putting single ZnO …
solid (VLS) technique. Schottky diodes of single NW were fabricated by putting single ZnO …
Fabrication of Schottky barrier diodes on clump of gallium nitride nanowires grown by chemical vapour deposition
S Sanjay, K Baskar - Applied Surface Science, 2018 - Elsevier
In this study, Schottky barrier diodes on 'clump of nanowires' has been fabricated and its
electrical behaviour on variation of distance of separation between Ohmic (Ti/Al/Ni/Au) and …
electrical behaviour on variation of distance of separation between Ohmic (Ti/Al/Ni/Au) and …
[HTML][HTML] Nanoscale Schottky contacts to GaN: Theoretical study and a brief review
Nanostructured GaN materials, including nanowires and nanorods, are advantageous for
nanoscale devices, owing to their higher surface-to-volume ratio than thin films. Despite the …
nanoscale devices, owing to their higher surface-to-volume ratio than thin films. Despite the …
Low frequency noise in single GaAsSb nanowires with self-induced compositional gradients
J Huh, DC Kim, AM Munshi, DL Dheeraj, D Jang… - …, 2016 - iopscience.iop.org
Due to bandgap tunability, GaAsSb nanowires (NWs) have received a great deal of attention
for a variety of optoelectronic device applications. However, electrical and optical properties …
for a variety of optoelectronic device applications. However, electrical and optical properties …
Comparative study of ultraviolet detectors based on ZnO nanostructures grown on different substrates
HI Abdulgafour, Z Hassan, NM Ahmed… - Journal of Applied …, 2012 - pubs.aip.org
Pd/ZnO/Pd metal-semiconductor-metal photodetectors have been successfully fabricated
using a variety of high-quality ZnO nanostructures. The nanostructures used included well …
using a variety of high-quality ZnO nanostructures. The nanostructures used included well …