Characterization of microvoids in thin hydrogenated amorphous silicon layers by spectroscopic ellipsometry and Fourier transform infrared spectroscopy
W Liu, L Zhang, F Meng, W Guo, J Bao, J Liu, D Wang… - Scripta Materialia, 2015 - Elsevier
Microstructures of voids in a-Si: H layers on the surface of c-Si wafers were quantitatively
analyzed by combining spectroscopic ellipsometry and Fourier transform infrared …
analyzed by combining spectroscopic ellipsometry and Fourier transform infrared …
Study on the role of filament temperature on growth of indium-catalyzed silicon nanowires by the hot-wire chemical vapor deposition technique
Silicon nanowires (SiNWs) were synthesized from indium catalysts on the Si (111) substrate
using the hot-wire chemical vapor deposition technique. A tungsten filament with purity of …
using the hot-wire chemical vapor deposition technique. A tungsten filament with purity of …
Effect of silane flow rate on structural, electrical and optical properties of silicon thin films grown by VHF PECVD technique
Hydrogenated silicon thin films deposited by VHF PECVD process for various silane flow
rates have been investigated. The silane flow rate was varied from 5 sccm to 30 sccm …
rates have been investigated. The silane flow rate was varied from 5 sccm to 30 sccm …
Exploring the photo paper as flexible substrate for fabrication of a-Si: H based thin film solar cells at low temperature (110° C): Influence of radio frequency power on …
R Madaka, V Kanneboina, P Agarwal - Thin Solid Films, 2018 - Elsevier
The effect of variation of radio frequency (rf) power on the structural, optical and electronic
properties of intrinsic hydrogenated amorphous silicon (a-Si: H) films deposited at very low …
properties of intrinsic hydrogenated amorphous silicon (a-Si: H) films deposited at very low …
Synthesis of nanocrystalline silicon thin films using the increase of the deposition pressure in the hot-wire chemical vapour deposition technique
S Halindintwali, D Knoesen, R Swanepoel… - South African Journal …, 2009 - journals.co.za
Nanostructured thin silicon-based films have been deposited using the hot-wire chemical
vapour deposition (HWCVD) technique at the University of the Western Cape. A variety of …
vapour deposition (HWCVD) technique at the University of the Western Cape. A variety of …
[图书][B] Amorphous silicon solar cells obtained by hot-wire chemical vapour deposition
D Soler Vilamitjana - 2004 - diposit.ub.edu
The photovoltaic conversion of sun light energy into electricity constitutes a viable, clean and
renewable alternative for electric energy production. A wide variety of different materials …
renewable alternative for electric energy production. A wide variety of different materials …
[图书][B] Effects of nanocrystalline silicon inclusions in doped and undoped thin films of hydrogenated amorphous silicon
CP Blackwell - 2009 - search.proquest.com
Hydrogenated amorphous silicon has attracted considerable interest as a low-cost material
for various large-area electronic devices, such as scanners, thin film transistors employed in …
for various large-area electronic devices, such as scanners, thin film transistors employed in …
Structural and optical properties of the a-Si: H thin films irradiated by high energetic electron beams
W Liu, X Jiang, W Li, J Wang, X Lian, Y Zeng… - Journal of Materials …, 2016 - Springer
Hydrogenated amorphous silicon (a-Si: H) films deposited on quartz substrate by radio-
frequency plasma enhanced chemical vapour deposition were irradiated by an high …
frequency plasma enhanced chemical vapour deposition were irradiated by an high …
Electronic transport in nanocrystalline germanium/hydrogenated amorphous silicon composite thin films
KE Bodurtha - 2015 - search.proquest.com
Recent interest in composite materials based on hydrogenated amorphous silicon (a-Si: H)
stems in part from its potential for technical applications in thin film transistors and solar …
stems in part from its potential for technical applications in thin film transistors and solar …