Trapping in MOScaps investigated by fast capacitive techniques

M Fregolent, A Marcuzzi, C De Santi… - 2023 IEEE …, 2023 - ieeexplore.ieee.org
We present a detailed investigation of charge trapping processes in Al_2O_3/GaN vertical
MOS capacitors, detected by means of advanced capacitance measurements. The devices …

High voltage GaN vertical FinFET with a compatible integrated fin diode for low reverse conduction loss

Z Zhao, Y Wei, T Sun, K Yang, J Wei, Y Jia… - Microelectronics …, 2023 - Elsevier
A high-voltage normally-off GaN vertical FinFET with a compatible integrated Fin Diode (FD-
FinFET) is proposed to improve reverse conduction performance. The Fin channel combined …

GaN Vertical MOSFETs With Monolithically Integrated Freewheeling Merged pn-Schottky Diodes (MPS-MOS) for 1.2-kV Applications

Y Ma, H Wang, S Chen, C Liu - IEEE Transactions on Electron …, 2024 - ieeexplore.ieee.org
We report 1.2-kV-class GaN-based vertical trench MOSFETs (T-MOS) with monolithically
integrated merged pn-Schottky (MPS) diodes (MPS-MOS) by numerical simulation. The …

Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors

D Favero, C De Santi, K Mukherjee, M Borga… - Microelectronics …, 2022 - Elsevier
For the development of reliable vertical GaN transistors, a detailed analysis of the
robustness of the gate stack is necessary, as a function of the process parameters and …

A New Vertical P-Gan Island Double-Trench Mosfet with High Voltage Resistance and Low Leakage

M Du, H Zhang, S Jin, B Zhang, W Mao… - Available at SSRN … - papers.ssrn.com
Due to the higher breakdown voltage (VDSmax) and anticipated improved reliability, vertical
gallium nitride (GaN) metal-oxide-semiconductor field-effect transistors (MOSFETs) are a …