Since the first report of amorphous In–Ga–Zn–O based thin film transistors, interest in oxide
semiconductors has grown. They offer high mobility, low off-current, low process …

The present work focuses on the fabrication of Gallium Nitride based triboelectric
nanogenerators for energy harvesting from moving NaCl droplets of various concentrations …

This article proposes for the first time the use of a stepped channel to increase the threshold
voltage (V th). At the same time, its working mechanism was explained and the step height …

In this study, we propose an optimized AlGaN/GaN high-electron-mobility transistor (HEMT)
with a considerably improved breakdown voltage. First, we matched the simulated data …

Embedding p-type gallium nitride (p-GaN) in Al x Ga 1-x N-based thin films has garnered
significant interest as a versatile structure for bandgap engineering such as tunnel/super …

As we all know, the normally-off HEMT is very important to the safety of power electronic
systems. To increase the threshold voltage of the device, this article proposes to cover Al 2 O …

Abstract High Electron Mobility Transistor (HEMT) attained great interest because of its
superior electron transport making it suitable for applications in high-speed circuits and high …

In this paper, the impact of AlGaN barrier thickness () and substrate leakage on the noise
conductance and noise figure in GaN High Electron Mobility Transistor (HEMT) is …

Control over the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures is
crucial for their practical applications in current semiconducting devices. However, the oxide …

In this work, we have designed an ammonia sensor based on Pt nanoparticles (NPs)
decorated AlGaN/GaN high electron mobility transistors (HEMTs) operating at 300 K. The …