The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

Metal oxide resistive switching memories have been a crucial component for the
requirements of the Internet of Things, which demands ultra‐low power and high‐density …

Neuromorphic computing can process large amounts of information in parallel and provides
a powerful tool to solve the von Neumann bottleneck. Constructing an artificial neural …

In the high-tech and intelligent era of the 21st century, as one of the important electronic
devices, wearable electronic products can effectively improve work efficiency and quality of …

The Internet of Things (IoT) has a broad vision of connecting every single object in the world
to form one network. Flexible electronic devices, including RFIDs, sensors, memory devices …

Resistively switching memory cells (ReRAM) are strong contenders for next-generation non-
volatile random access memories. In this paper, we present ReRAM cells on flexible …

Rapid fabrication of flexible electronics is attracting much attention in many industries. There
is a need to rapidly produce flexible electronic components without relying on costly …

Memristor got a significant attraction to be the next generation memory device due to its
small size, simple architecture, high density, and low power consumption. A memristor is a …

Resistive switching (RS) devices or memristors have received a lot of attention in the last
decade owing to their valuable and interesting properties, such as high-density, switching …

The present study reports on the fabrication of non-volatile resistive switching (RS) memory
device using MoO 3 layers. Using a spray pyrolysis technique, different thicknesses of MoO …