Energy storage devices constitute one of the research areas in recent years. Capacitors are
commonly used for the storage of electrical energy. The current research is focusing on not …

This paper furnishes a Comprehensive study about an emerging GaN HEMT technology
suitable for RF and high power applications. It plays a vital role in Wireless communication …

The continuous development in the field of the electronics industry has increased the
demand for optoelectronic and dielectric substrate materials. Herein, ZnSnO 3 (ZTO) and M …

An accurate two dimensional subthreshold modeling of Germanium based Dual Halo Gate
stacked Triple Material Surrounding Gate (Ge-DH-GS-TM-SG) tunnel field effect transistor is …

Due to significant growth of the industrial companies and domestic electricity consumers
along with appearance of the sensitive electrical and electronic equipment, the proper …

In this article, we propose a 2-D study for investigating the self-heating effect in new partially
insulated field-effect transistors (PiFETs) based on high-k gate dielectrics. The thermal …

This paper investigates the performance of 6 T SRAM cell using high-K gate dielectric based
junctionless silicon nanotube FET (JLSiNTFET). It is observed that the use of high-K gate …

The design of CMOS circuits using nanoscale MOSFET has become very difficult nowadays
as device modeling faces new challenges such as short channel effects and mobility …

This article proposes an optimized device structure using undoped Multi Bridge Channel
(MBC) Silicon on Insulator (SOI) based MOSFET analyzed at sub 10 nm channel length …

This paper presents the effect of quantum confinement on the potential of short channel
mono-layer molybdenum disulfide (MoS 2) based transistor using Ritz Galerkin finite …