This review describes recent groundbreaking results in Si, Si/SiGe, and dopant-based
quantum dots, and it highlights the remarkable advances in Si-based quantum physics that …

The spin-orbit interaction lies at the heart of quantum computation with spin qubits, research
on topologically nontrivial states, and various applications in spintronics. Hole spins in Ge/Si …

We review recent theoretical and experimental advances toward understanding the effects
of nuclear spins in confined nanostructures. These systems, which include quantum dots …

Double quantum dots are convenient solid-state platforms to encode quantum information.
Two-electron spin states can be detected and manipulated using quantum selection rules …

Silicon quantum dot spin qubits have great potential for application in large-scale quantum
circuits as they share many similarities with conventional transistors that represent the …

Hole spins confined in semiconductor quantum dot systems have gained considerable
interest for their strong spin-orbit interactions (SOIs) and relatively weak hyperfine …

We investigate spin relaxation in a silicon double quantum dot via leakage current through
Pauli blockade as a function of interdot detuning and magnetic field. A dip in leakage current …

Single electrons trapped in quantum dots hosted in silicon nanostructures are a promising
platform for the implementation of quantum technologies. In this study, we investigated the …

Holes in nanowires have drawn significant attention in recent years because of the strong
spin–orbit interaction, which plays an important role in constructing Majorana zero modes …

We analyze the electron spin relaxation rate 1/T 1 of individual ion-implanted P 31 donors in
a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with the aim of …