Spin electronics is a rapidly expanding field stimulated by a strong synergy between
breakthrough basic research discoveries and industrial applications in the fields of magnetic …

Voltage control of magnetism (VCM) is attracting increasing interest and exciting significant
research activity driven by its profound physics and enormous potential for application. This …

Magnetically engineered magnetic tunnel junctions (MTJs) show promise as non-volatile
storage cells in high-performance solid-state magnetic random access memories (MRAM) …

A magnetic tunnel junction (MTJ), which consists of a thin insulating layer (a tunnel barrier)
sandwiched between two ferromagnetic electrode layers, exhibits tunnel magnetoresistance …

By use of first-principles electronic structure calculations, we predict that the
magnetoresistance of the bcc Co (100)∕ Mg O (100)∕ bcc Co (100) and Fe Co (100)∕ Mg …

Density-functional calculations are performed to explore magnetoelectric effects originating
from the influence of an external electric field on magnetic properties of the Fe/MgO (001) …

First-principles calculations of the electronic structure and tunneling magnetoconductance of
Fe-FeO-MgO-Fe tunneling junctions are compared to those of Fe-MgO-Fe. We find that an …

The electric-field-induced switching of magnetocrystalline anisotropy (MCA) between in-
plane and out-of-plane orientations is investigated by first-principles calculations for the …

This paper provides a brief overview of the young, but rapidly growing field of spintronics. Its
primary objective is to explain how as electrons tunnel through simple insulators such as …

We report on spin-polarized tunneling in fully epitaxial Fe/MgO/Fe/Co tunnel junctions. By
increasing the thickness of the insulating layer (tMgO), we have strongly enhanced the …