The solid solutions of Ca x Ba 1− x Ga 2 S 4 (x= 0, 0. 1,…, 1) were synthesized by solid-
phase reactions from powder components of CaS, BaS, and Ga2S3. The temperature …

Cu2Te single crystal was grown by the Bridgman method. X-ray diffraction (XRD) study of
Cu2Te single crystals in the temperature range of 293–893 K was performed and possible …

Metal monochalcogenides (MX) have recently been rediscovered as two-dimensional
materials with electronic properties highly dependent on the number of layers. Although …

The dependences of the kinetic coefficients, namely, the Hall coefficient, electrical
conductivity, and charge carrier mobility on the temperature, electric field strength, and …

We aimed to investigate the influence of Er 3+ rare earth element on the frequency
conversion wavelength in boron doped GaSe crystals. It was found that by substitution of Er …

In this study, we experimentally study the dependence of the intensity of laser radiation
incident on and transmitted through a layered InSe crystal. A picosecond YAG: Nd3+ laser …

The concentrations of forming defects during phase transitions (PTs) and elastic coefficients
in the Cu 1. 9 5 Ni 0. 0 5 S compound were determined based on differential thermal …

Photoluminescence properties of Ca 4 Ga 2 S 7: Eu 2+ chalcogenide semiconductors have
been studied under the impulse laser excitation in the range of 10–105 W/cm2 at room …

Регистрация слабого инфракрасного (ИК) излучения является одной из основных
проблем фотоэлектроники. При наличии фонового излучения этот вопрос еще больше …

The main physical properties of heterostructures based on pure and erbium-doped layered
p-GaSe and n-InSe semiconductors have been investigated. The possibility of increasing …