Tuning the luminescence of phosphors is extremely important in controlling and processing
light for active components of light sources, optical sensing, display devices, and …

Despite the well-known implications in the field of III–V semiconductors, lattice strain in
halide perovskite materials has been largely overlooked until recently. Here, we review the …

For more than 50 years, research into III–V compound semiconductors has focused almost
exclusively on materials grown on (001)-oriented substrates. In part, this is due to the …

The realisation of photonic devices for different energy ranges demands materials with
different bandgaps, sometimes even within the same device. The optimal solution in terms of …

Cavity-enhanced single quantum dots (QDs) are the main approach towards ultra-high-
performance solid-state quantum light sources for scalable photonic quantum technologies …

Research into self-assembled semiconductor quantum dots (QDs) has helped advance
numerous optoelectronic applications, ranging from solid-state lighting to photodetectors. By …

We describe the initial efforts to use molecular beam epitaxy to grow InAs quantum dots on
GaAs via the Stranski–Krastanov transition and then discuss the initial efforts to use these …

Reaction of n-octylamine-passivated {CdSe [n-octylamine] 0.53±0.06} quantum belts with
anhydrous metal carboxylates M (oleate) 2 (M= Cd, Zn) results in a rapid exchange of the L …

We demonstrate the ability to tailor self-assembled growth of In0. 5Ga0. 5As quantum dots
(QDs) on GaSb (111) A surfaces by molecular beam epitaxy. Spontaneous formation via the …

Driven by tensile strain, GaAs quantum dots (QDs) self-assemble on In0. 52Al0. 48As (111)
A surfaces lattice-matched to InP substrates. In this study, we show that the tensile-strained …