Accurate SOI MOSFET characterization at microwave frequencies for device performance optimization and analog modeling
JP Raskin, R Gillon, J Chen… - … on Electron Devices, 1998 - ieeexplore.ieee.org
The maturation of low-cost silicon-on-insulator (SOI) MOSFET technology in the microwave
domain has brought about a need to develop specific characterization techniques. An …
domain has brought about a need to develop specific characterization techniques. An …
SOI technologies for RF and millimeter-wave applications
This chapter presents an overview of silicon-on-insulator (SOI) technology for radio-
frequency (RF) and millimeter-wave telecommunication applications. The SOI technology …
frequency (RF) and millimeter-wave telecommunication applications. The SOI technology …
Small-and large-signal performance up to 175° C of low-cost porous silicon substrate for RF applications
This paper focuses on the comparison of the RF performances of various advanced trap-rich
(TR) siliconon-insulator (SOI) and porous silicon (PSi) substrates. The PSi substrates are …
(TR) siliconon-insulator (SOI) and porous silicon (PSi) substrates. The PSi substrates are …
SOI CMOS transistors for RF and microwave applications
The new communication markets are vey demanding: high frequency, high degree of
integration, low power consumption. Silicon-on-Insulator offers many advantages and this …
integration, low power consumption. Silicon-on-Insulator offers many advantages and this …
Direct extraction of the series equivalent circuit parameters for the small-signal model of SOI MOSFETs
JP Raskin, G Dambrine, R Gillon - IEEE microwave and guided …, 1997 - ieeexplore.ieee.org
A new extraction scheme is proposed which allows to determine all the series equivalent
circuit elements values from S-parameters measurements at a single bias point in saturation …
circuit elements values from S-parameters measurements at a single bias point in saturation …
Double buried oxide trap-rich substrates for high frequency applications
Measurements of a new type of substrate for the integration of the trap-rich interface
passivation solution with the below-buried oxide functionalities required in fully-depleted …
passivation solution with the below-buried oxide functionalities required in fully-depleted …
[图书][B] Characterization and modeling of SOI RF integrated components
M Dehan - 2003 - books.google.com
The boom of mobile communications leads to an increasing request of low cost and low
power mixed mode integrated circuits. Maturity of SOI technology, and recent progresses of …
power mixed mode integrated circuits. Maturity of SOI technology, and recent progresses of …
An asymmetric channel SOI nMOSFET for improving DC and microwave characteristics
Asymmetric doped channel metal oxide semiconductor field effect transistors (MOSFETs)
have recently been investigated by several authors in bulk and silicon-on-insulator (SOI) …
have recently been investigated by several authors in bulk and silicon-on-insulator (SOI) …
RF small-and large-signal characteristics of CPW and TFMS lines on trap-rich HR-SOI substrates
BK Esfeh, M Rack, KB Ali, F Allibert… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
The main objective of this paper is to evaluate RF losses and nonlinear behavior of coplanar
wave-guide (CPW) and thin-film microstrip (TFMS) lines from room temperature up to 175° C …
wave-guide (CPW) and thin-film microstrip (TFMS) lines from room temperature up to 175° C …
Behavior of gold-doped silicon substrate under small-and large-RF signal
In this paper, small-and large-signal performances of passive devices integrated on high-
resistivity, trap-rich and gold-doped silicon wafers are presented and compared through …
resistivity, trap-rich and gold-doped silicon wafers are presented and compared through …