Yttrium silicates (Y–Si–O oxides), including Y2Si2O7, Y2SiO5, and Y4· 67 (SiO4) 3O apatite,
have attracted wide attentions from material scientists and engineers, because of their …

3,357,961 A 12/1967 Makowski et al. 3,381,114. A 4, 1968 Nakanuma 4,058.430 A 11, 1977
Suntola et al. 4,215,156 A 7, 1980 Dalal et al. 4,302.620 A 11, 1981 Chu 4.333, 808 A …

The passivation of III–V semiconductor materials with sulphur is widely reported to reduce
interface state defects and improve semiconductor device performance. The most common …

Oxide dispersion strengthened (ODS) alloys exhibit superior mechanical properties due to
the presence of nano-sized thermally stable oxide particles. However, manufacturing of ODS …

Europium doped Yttrium oxide (Y 2 O 3) nanophosphors with different doping
concentrations were synthesized by simple and efficient sol-gel method. The structural …

Pyrochlore-type yttrium stannate (Y2Sn2O7) doped with trivalent europium ions (Eu3+) was
synthesized as thin films by the sol− gel method. X-ray diffractometry, high-resolution …

Deposition of hafnium silicate films with various hafnium contents was tried by plasma-
enhanced chemical vapor deposition using tetraethoxysilane and a hafnium alkoxide. From …

5,572,052 A “H996 Kashiham et a1 ' by atom1c layer depos1t1on,'and depos1tmg a
lanthamde 5,698,022 A 12/1997 Glassman et a1 ' dopant by atom1c layer depos1t1on onto …

In this paper, the possibilities of rare-earth oxides as gate dielectrics are discussed. The thin
films have mostly been fabricated by physical vapor deposition methods. The rare earths …

A synthetic avenue for the formation of yttrium oxide thin films on Si native oxide surfaces is
demonstrated by the reaction of Tris (2, 2, 6, 6-tetramethyl-3, 5-heptanedionato) yttrium (III) …