The magnetic tunnel junction (MTJ) using MgO barrier is one of most important building
blocks for spintronic devices and has been widely utilized as miniaturized magentic sensors …

Spintronics has received a great attention and significant interest within the past decades,
and provided considerable and remarked applications in industry and electronic information …

Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT) and 914%
at 3 K were demonstrated in epitaxial Fe/MgO/Fe (001) exchange-biased spin-valve …

Present review focuses the investigation carried out in order to understand the interface
structure of magnetic tunnel junction (MTJ) by considering Fe/MgO/Fe as prototype structure …

Because tetragonal structured MnGa alloy has intrinsic (not interface induced) giant
perpendicular magnetic anisotropy (PMA), ultra-low damping constant and high spin …

We report an inelastic electron tunneling spectroscopy study on MgO magnetic junctions
with thin barriers (0.85–1.35 nm). Inelastic electron tunneling spectroscopy reveals resonant …

Nano-crystal domain structures formed in a MgO barrier and their effects on tunnel
magnetoresistance (TMR) in epitaxial fcc-Co 90 Fe 10 (CoFe)(111)/MgO (111)/CoFe (111) …

The transport properties of magnetic tunnel junctions (MTJs) are very sensitive to interface
modifications. In this work we investigate both experimentally and theoretically the effect of …

We derive expressions for both parallel and perpendicular components of spin transfer
torque (STT) in magnetic tunnel junctions (MTJs), which have several important advantages …

Widespread application of magnetic tunnel junctions (MTJs) for information storage has so
far been limited by the complicated interplay between tunnel magnetoresistance (TMR) ratio …