In recent years, the (Al x Ga 1-x) 2 O 3 materials have attracted intense research interest due
to their considerable potentials in the fabrication of deep-ultraviolet optoelectronic and high …

Activation of implanted donors into a highly-resistive, nitrogen-doped homoepitaxial β-Ga 2
O 3 has been investigated. Nitrogen acceptors with the concentration of∼ 10 17 cm− 3 were …

Despite the tremendous progress on wide-bandgap materials in the last few decades,
devices made of these materials are still far from their maximum theoretical performance …

Beta gallium oxide (β-Ga 2 O 3) is a promising ultra-wide bandgap semiconductor with
attractive physical properties for next-generation high-power devices, radio frequency …

The microwave (MW) dielectric permittivity of gallium oxide (β-Ga 2 O 3) fundamentally
determines its interaction with an electromagnetic wave in bulk power. Yet, there is a lack of …

The negative Poisson's ratio (NPR) effect usually endows materials with promising ductility
and shear resistance, facilitating a wider range of applications. It has been generally …

Silicon nitride based materials have emerged as the promising candidates for high-power
electronics and next-generation gate dielectrics. Herein, the crucial characteristics of …

The fabrication and switching characteristics of large diameter (1mm) Ga2O3 heterojunction
rectifiers with bilayers of NiO as the p-type layer are reported. The band alignment shows …

β-(Al x Ga 1− x) 2 O 3 presents a diverse material characterization exhibiting exceptional
electrical and optical properties. Considering the miniaturization of gallium oxide devices …

In this article, the electronic band structure of a β−(A lx G a 1− x) 2 O 3 alloy system is
calculated, with β− Ga 2 O 3 as the bulk crystal. The technique of band unfolding is …