[HTML][HTML] A review of Ga2O3 materials, processing, and devices

SJ Pearton, J Yang, PH Cary, F Ren, J Kim… - Applied Physics …, 2018 - pubs.aip.org
Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …

[PDF][PDF] Gallium OXIDE: Properties and applica 498 a review

S Stepanov, V Nikolaev, V Bougrov, A Romanov - Rev. Adv. Mater. Sci, 2016 - ipme.ru
Gallium oxide has attracted a considerable interest as a functional material for various
applications. This review summarizes the research work carried out in the field of gallium …

Quasiparticle bands and spectra of polymorphs

J Furthmüller, F Bechstedt - Physical Review B, 2016 - APS
Within the framework of density functional theory and Hedin's GW approximation for single-
particle excitations, we present quasiparticle band structures and densities of states for two …

Gallium oxide-based optical nonlinear effects and photonics devices

J Zhou, H Chen, K Fu, Y Zhao - Journal of Materials Research, 2021 - Springer
Photonics devices working in the ultraviolet and visible (UV–Vis) spectra have drawn great
attention due to their potential applications in the optical computing, communication, and bio …

High quality crystal growth and anisotropic physical characterization of β-Ga2O3 single crystals grown by EFG method

W Mu, Z Jia, Y Yin, Q Hu, Y Li, B Wu, J Zhang… - Journal of Alloys and …, 2017 - Elsevier
Abstract β-Ga 2 O 3 is an ultra wide-bandgap semiconductor with promising applications in
high voltage and temperature electronic devices and deep-ultraviolet optoelectronic …

Anisotropic complex refractive index of β-Ga2O3 bulk and epilayer evaluated by terahertz time-domain spectroscopy

VC Agulto, K Toya, TNK Phan, VK Mag-usara… - Applied Physics …, 2021 - pubs.aip.org
Homoepitaxial film and semi-insulating bulk β-Ga 2 O 3 with (001) orientation were studied
using terahertz time-domain spectroscopy (THz-TDS) in the frequency region from 0.2 to 3.0 …

[HTML][HTML] Alloyed β-(AlxGa1− x) 2O3 bulk Czochralski single β-(Al0. 1Ga0. 9) 2O3 and polycrystals β-(Al0. 33Ga0. 66) 2O3, β-(Al0. 5Ga0. 5) 2O3), and property trends

J Jesenovec, B Dutton, N Stone-Weiss… - Journal of Applied …, 2022 - pubs.aip.org
In this work, bulk Czochralski-grown single crystals of 10 mol.% Al 2 O 3 alloyed β-Ga 2 O 3—
monoclinic 10% AGO or β-(Al 0.1 Ga 0.9) 2 O 3—are obtained, which show+ 0.20 eV …

[HTML][HTML] The anisotropic quasi-static permittivity of single-crystal β-Ga2O3 measured by terahertz spectroscopy

P Gopalan, S Knight, A Chanana, M Stokey… - Applied Physics …, 2020 - pubs.aip.org
The quasi-static anisotropic permittivity parameters of electrically insulating beta gallium
oxide (β-Ga 2 O 3) were determined by terahertz spectroscopy. Polarization-resolved …

[HTML][HTML] Ir4+ ions in β-Ga2O3 crystals: An unintentional deep donor

CA Lenyk, NC Giles, EM Scherrer… - Journal of Applied …, 2019 - pubs.aip.org
Electron paramagnetic resonance (EPR) and infrared absorption are used to detect Ir 4+
ions in β-Ga 2 O 3 crystals. Mg and Fe doped crystals are investigated, and concentrations …

Low thermal budget heteroepitaxial gallium oxide thin films enabled by atomic layer deposition

E Rafie Borujeny, O Sendetskyi… - … Applied Materials & …, 2020 - ACS Publications
This work explores the applicability of atomic layer deposition (ALD) in producing highly
oriented crystalline gallium oxide films on foreign substrates at low thermal budgets. The …