The conduction process as well as the unipolar resistive switching behavior of Au∕ Hf O 2∕
Ti N metal-insulator-metal structures were investigated for future nonvolatile memory …

Metal–insulator–metal (MIM) capacitors are inevitable and critical passive components in
analog, mixed-signal, and memory applications. These capacitors occupy nearly 40% of …

The soaring global demand for flexible, wearable and transparent devices has created an
urgent need for new fabrication technologies that are both cost-competitive and eco-friendly …

In this communication we report the details of the structural and thermal properties of
monoclinic layered perovskite type Pr2Ti2O7 (PTO) using ambient to higher temperature …

The dielectric stacking effects of Al 2 O 3 and HfO 2 thin layers in metal-insulator-metal
capacitors are investigated for their leakage current, breakdown voltage, and voltage …

The intrinsic field effect, the change in surface conductance with an applied transverse
electric field, of prototypal strongly correlated VO 2 has remained elusive. Here we report its …

High-dielectric constant (high-k) gate oxides and low-dielectric constant (low-k) interlayer
dielectrics (ILD) have dominated the nanoelectronic materials research scene over the past …

The spectroscopic parameters and electronic structure of binary titanate Pr2Ti2O7 have
been studied by IR-, Raman and X-ray photoelectron spectroscopy (XPS) for the powder …

This work highlights the influence of the oxygen affinity of the metal electrodes used in high-
k metal-insulator-metal capacitors. Several metallic electrodes are tested in order to …

The mechanical properties of sputter-deposited HfO 2 and Hf x Si 1-x O 2 films were studied
as a function of composition using nanoindentation. The elastic modulus and hardness were …